Fig. 1.
(a) Fully differential amplifier. (b) Pseudo-differential amplifier.
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| Citation: |
Wenyuan Li, Qian Zhang. A novel broadband power amplifier in SiGe HBT technology[J]. Journal of Semiconductors, 2013, 34(1): 015001. doi: 10.1088/1674-4926/34/1/015001
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W Y Li, Q Zhang. A novel broadband power amplifier in SiGe HBT technology[J]. J. Semicond., 2013, 34(1): 015001. doi: 10.1088/1674-4926/34/1/015001.
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A novel broadband power amplifier in SiGe HBT technology
DOI: 10.1088/1674-4926/34/1/015001
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Abstract
A novel broadband power amplifier fabricated in 0.13 μm SiGe HBT technology is realized. The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node. A compensated matching technique is adopted in interstage matching to expand bandwidth. A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching, which ensures maximum power transfer. An adaptive bias circuit could improve linearity and efficiency in wide output power level. With 2.5 V power supply, the measured results achieve 96% 3-dB bandwidth (517-1470 MHz), 27.2 dB power gain, 26.9 dBm maximum output power, 19.7 dBm output 1 dB compression point, and 26.7% power added efficiency. -
References
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