Citation: |
Jin Wang, Tingdun Wen, Liping Xu, Zufan Liu. Influence of incident angle on the defect mode of locally doped photonic crystal[J]. Journal of Semiconductors, 2013, 34(11): 112003. doi: 10.1088/1674-4926/34/11/112003
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J Wang, T D Wen, L P Xu, Z F Liu. Influence of incident angle on the defect mode of locally doped photonic crystal[J]. J. Semicond., 2013, 34(11): 112003. doi: 10.1088/1674-4926/34/11/112003.
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Influence of incident angle on the defect mode of locally doped photonic crystal
DOI: 10.1088/1674-4926/34/11/112003
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Abstract
By means of a transfer matrix method, this paper deduces the transmittance calculation equation of light travelling in locally doped (including one defect layer) mirror heterostructure (ABCCBA)PD(ABCCBA)Q photonic crystals. In the cases of defect layers being either introduced or not introduced, an ORIGIN simulation shows the influence of incident angle change on the number of photon band gap, bandwidth and defect mode numbers. Studies indicate that when such photonic crystals have 8 mirror cycles and the thickness of defect layer D meets nDdD=λ 0/2 or nD dD=4λ 0, the photonic crystal defect mode transmission peak changes significantly. Also, with the change of incident angle, the number of defect mode transmission peaks changes. By altering incident angle and defect layer thickness, we can get photon band gaps and defect mode transmission peaks at different frequency domains and different relative angular frequencies. This provides theoretical reference for achieving light wave multi-channel filtering and tunable filtering. -
References
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