J. Semicond. > 2013, Volume 34 > Issue 12 > 124001
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SEMICONDUCTOR DEVICES

A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure

Binghua Li, Frank X. C. Jiang, Zhigui Li and Xinnan Lin

+ Author Affiliations

 Corresponding author: Lin Xinnan, xnlin@pkusz.edu.cn

DOI: 10.1088/1674-4926/34/12/124001

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Abstract: A high performance trench insulated gate bipolar transistor which combines a semi-superjunction structure and an accumulation channel (sSJTAC-IGBT) is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage (BV), a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area (SCSOA) and reduces the energy loss during the turn-off process.

Key words: accumulation channel, semi-superjunction structure, BV, SCSOA



[1]
Khanna V K. The insulated gate bipolar transistor (IGBT) theory and design. 1st ed. Canada:Institute of Electrical and Electronics Engineers, 2003
[2]
Takahashi H, Haruguchi H, Hagino H, et al. Carrier stored trench gate bipolar transistor (CSTBT)——a novel power device for high voltage application. ISPSD, 1996:349 http://ieeexplore.ieee.org/document/509513/
[3]
Wang Bo, Tan Jingfei, Zhang Wenliang, et al. A simulation study on a novel trench SJIGBT. Journal of Semiconductors, 2012, 33(11):114002 doi: 10.1088/1674-4926/33/11/114002
[4]
Jiang Huaping, Wei Jin, Zhang Bo, et al. Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode. IEEE Electron Device Lett, 2012, 33(12):1684 doi: 10.1109/LED.2012.2219612
[5]
Li Zehong, Qian Mengliang, Zhang Bo. TAC-IGBT:an improved IGBT structure. ISPSD, 2009:124 http://ieeexplore.ieee.org/document/5158017/?reload=true&arnumber=5158017&punumber%3D5116067
[6]
Qian Mengliang, Li Zehong, Zhang Bo, et al. Insulated gate bipolar transistor with trench gate structure of accumulation channel. Journal of Semiconductors, 2010, 31(3):034002 doi: 10.1088/1674-4926/31/3/034002
[7]
Bobde M D, Baliga B J. Silicon planar ACCUFET improved power MOSFET structure. Electron Lett, 2000, 36:913 doi: 10.1049/el:20000647
[8]
Qian Mengliang, Li Zehong, Zhang Bo, et al. Trench gate IGBT structure with floating P region. Journal of Semiconductors, 2010, 31(2):024003 doi: 10.1088/1674-4926/31/2/024003
[9]
Baliga B J. Power semiconductor devices. Boston:PWS Publishing Co, 1996
[10]
Fujihira T. Theory of semiconductor superjunction devices. Jpn J Appl Phys, 1997, 36(10):6254 doi: 10.1143/JJAP.36.6254/meta;jsessionid=BF604420DCD5769E98481879482C215E.c2.iopscience.cld.iop.org
[11]
Fujihira T. Simulated superior performances of semiconductor superjunction devices. ISPSD, 1998:423 http://ieeexplore.ieee.org/document/702736/
[12]
Lorenz L, Deboy G, Knapp A, et al. CoolMOS-A new milestone in high voltage power MOS. ISPSD, 1999:3 https://www.researchgate.net/publication/3797528_CoolMOS_-_a_new_milestone_in_high_voltage_power_MOS
[13]
Oh K H, Lee J, Lee K H, et al. A simulation study on novel field stop IGBTs using superjunction. IEEE Trans Electron Devices, 2006, 53(4):884 doi: 10.1109/TED.2006.870278
[14]
Antoniou M, Udrea F, Bauer F, et al. The semi-superjunction IGBT. IEEE Electron Device Lett, 2010, 31(6):591 doi: 10.1109/LED.2010.2046132
[15]
Sentaurus TCAD Manuals. Synopsys Inc, 2011
[16]
Wang Y, Chen X. A novel super-junction IGBT and its unique conducting mechanism. Research & Progress of Solid State Electronics, 2011, 31(6):545 http://en.cnki.com.cn/Article_en/CJFDTOTAL-GTDZ201106007.htm
Fig. 1.  Cross sections of the sSJTAC and the TAC-IGBT.

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Fig. 2.  3-D electric field distribution of the sSJTAC-IGBT and the TAC-IGBT in blocking mode.

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Fig. 3.  Forward blocking voltage of the TAC and the sSJTAC with different Y-mid values.

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Fig. 4.  (a) Carrier distribution of the sSJTAC-IGBT in the horizontal direction at $y =$ 20 $\mu $m. (b) Carrier distribution of the sSJTAC-IGBT and the TAC-IGBT in the vertical direction at $x =$ 2.1 $\mu$m.

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Fig. 5.  On-state characteristics of the sSJTAC-IGBT and the TAC-IGBT.

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Fig. 6.  (a) Turn-off time of the TAC-IGBT and the sSJTAC-IGBT with different Y-mid values. (b) Power dissipation of the TAC-IGBT and the sSJTAC-IGBT with different Y-mid values.

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Table 1.   Device specifications.
[1]
Khanna V K. The insulated gate bipolar transistor (IGBT) theory and design. 1st ed. Canada:Institute of Electrical and Electronics Engineers, 2003
[2]
Takahashi H, Haruguchi H, Hagino H, et al. Carrier stored trench gate bipolar transistor (CSTBT)——a novel power device for high voltage application. ISPSD, 1996:349 http://ieeexplore.ieee.org/document/509513/
[3]
Wang Bo, Tan Jingfei, Zhang Wenliang, et al. A simulation study on a novel trench SJIGBT. Journal of Semiconductors, 2012, 33(11):114002 doi: 10.1088/1674-4926/33/11/114002
[4]
Jiang Huaping, Wei Jin, Zhang Bo, et al. Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode. IEEE Electron Device Lett, 2012, 33(12):1684 doi: 10.1109/LED.2012.2219612
[5]
Li Zehong, Qian Mengliang, Zhang Bo. TAC-IGBT:an improved IGBT structure. ISPSD, 2009:124 http://ieeexplore.ieee.org/document/5158017/?reload=true&arnumber=5158017&punumber%3D5116067
[6]
Qian Mengliang, Li Zehong, Zhang Bo, et al. Insulated gate bipolar transistor with trench gate structure of accumulation channel. Journal of Semiconductors, 2010, 31(3):034002 doi: 10.1088/1674-4926/31/3/034002
[7]
Bobde M D, Baliga B J. Silicon planar ACCUFET improved power MOSFET structure. Electron Lett, 2000, 36:913 doi: 10.1049/el:20000647
[8]
Qian Mengliang, Li Zehong, Zhang Bo, et al. Trench gate IGBT structure with floating P region. Journal of Semiconductors, 2010, 31(2):024003 doi: 10.1088/1674-4926/31/2/024003
[9]
Baliga B J. Power semiconductor devices. Boston:PWS Publishing Co, 1996
[10]
Fujihira T. Theory of semiconductor superjunction devices. Jpn J Appl Phys, 1997, 36(10):6254 doi: 10.1143/JJAP.36.6254/meta;jsessionid=BF604420DCD5769E98481879482C215E.c2.iopscience.cld.iop.org
[11]
Fujihira T. Simulated superior performances of semiconductor superjunction devices. ISPSD, 1998:423 http://ieeexplore.ieee.org/document/702736/
[12]
Lorenz L, Deboy G, Knapp A, et al. CoolMOS-A new milestone in high voltage power MOS. ISPSD, 1999:3 https://www.researchgate.net/publication/3797528_CoolMOS_-_a_new_milestone_in_high_voltage_power_MOS
[13]
Oh K H, Lee J, Lee K H, et al. A simulation study on novel field stop IGBTs using superjunction. IEEE Trans Electron Devices, 2006, 53(4):884 doi: 10.1109/TED.2006.870278
[14]
Antoniou M, Udrea F, Bauer F, et al. The semi-superjunction IGBT. IEEE Electron Device Lett, 2010, 31(6):591 doi: 10.1109/LED.2010.2046132
[15]
Sentaurus TCAD Manuals. Synopsys Inc, 2011
[16]
Wang Y, Chen X. A novel super-junction IGBT and its unique conducting mechanism. Research & Progress of Solid State Electronics, 2011, 31(6):545 http://en.cnki.com.cn/Article_en/CJFDTOTAL-GTDZ201106007.htm

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    Received: 12 May 2013 Revised: 09 June 2013 Online: Published: 01 December 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(12): 124001
      Binghua Li, Frank X. C. Jiang, Zhigui Li, Xinnan Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. Journal of Semiconductors, 2013, 34(12): 124001. doi: 10.1088/1674-4926/34/12/124001 ****B H Li, F X C Jiang, Z G Li, X N Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. J. Semicond., 2013, 34(12): 124001. doi:  10.1088/1674-4926/34/12/124001.
      Citation:
      Binghua Li, Frank X. C. Jiang, Zhigui Li, Xinnan Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. Journal of Semiconductors, 2013, 34(12): 124001. doi: 10.1088/1674-4926/34/12/124001 ****
      B H Li, F X C Jiang, Z G Li, X N Lin. A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure[J]. J. Semicond., 2013, 34(12): 124001. doi:  10.1088/1674-4926/34/12/124001.
      shu

      A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure

      DOI: 10.1088/1674-4926/34/12/124001

      • The Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China

      Funds:

      the Guangdong Science & Technology Project 2010B090400443

      the Shenzhen Science & Technology Foundation JC201005270276A

      the Longgang Science & Technology Developing Foundation 

      Project supported by the Guangdong Science & Technology Project (No. 2010B090400443), the Shenzhen Science & Technology Foundation (Nos. JC201005270276A, ZD201006110039A), and the Longgang Science & Technology Developing Foundation

      the Shenzhen Science & Technology Foundation ZD201006110039A

      More Information
      • Corresponding author: Lin Xinnan, xnlin@pkusz.edu.cn
      • Received Date: 2013-05-12
      • Revised Date: 2013-06-09
      • Published Date: 2013-12-01

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