Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors

Wenfeng Xiang; Kun Liu; Kun Zhao; Shouxian Zhong

doi:10.1088/1674-4926/34/12/123002

J. Semicond. > 2013, Volume 34 > Issue 12 > 123002

SEMICONDUCTOR MATERIALS

Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors

Wenfeng Xiang^{1, 2,}, Kun Liu¹, Kun Zhao¹ and Shouxian Zhong¹

+ Author Affiliations

Corresponding author: Xiang Wenfeng, wfxiang@cup.edu.cn

DOI: 10.1088/1674-4926/34/12/123002

Abstract: The electrical properties of Ni_0.95Pt_0.05-germanosilicide/Si_1-xGe_x contacts on heavily doped p-type strained Si_1-xGe_x layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal-oxide-semiconductor (CMOS) process to measure contact resistance. The results showed that the contact resistance of the Ni_0.95Pt_0.05-germanosilicide/Si_1-xGe_x contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10¹⁹ cm^-3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5×10¹⁷ cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.

Key words: specific contact resistivity, Ni(Pt) germanosilicide, Ge fraction, doping concentration

References

[1]	Wang C, Snyder J P, Tucker J R. Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistor. Appl Phys Lett, 1999, 74:1174 doi: 10.1063/1.123477
[2]	Iwai H, Ohguro T, Ohmi S. NiSi salicide technology for scaled CMOS. Microelectron Eng, 2002, 60:157 doi: 10.1016/S0167-9317(01)00684-0
[3]	Liehr M, Schmid P E, LeGoues F K, et al. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si (111). Phys Rev Lett, 1985, 54:2139 doi: 10.1103/PhysRevLett.54.2139
[4]	Weber W M, Geelhaar L, Graham A P, et al. Silicon-nanowire transistor with intruded nickel-silicide contacts. Nano Lett, 2006, 6:2660 doi: 10.1021/nl0613858
[5]	Luo J, Qiu Z J, Zhang Z, et al. Interaction of NiSi with dopants for metallic source/drain applications. J Vac Sci Technol B, 2010, 28:c1i1 doi: 10.1116/1.3248267
[6]	Liu J, Ozturk M C. Nickel germanosilicide contacts formed on heavily boron doped Si_1-xGe_x source/drain junctions for nanoscale CMOS. IEEE Trans Electron Devices, 2005, 52:1535 doi: 10.1109/TED.2005.850613
[7]	Jarmar T, Ericson F, Smith U, et al. Influence of germanium on the formation of NiSi_1-xGe_x on (111)-oriented Si_1-xGe_x. J Appl Phys, 2005, 98:053507 doi: 10.1063/1.2034081
[8]	Xiang W F. Erbium germanosilicide ohmic contacts on Si_1-xGe_x (x=0-0.3) substrates. Science China:Phys Mechan. & Astron, 2011, 54:1116
[9]	Ikeda K, Oda M, Kamimuta Y, et al. Hole-mobility and drive-current enhancement in Ge-rich strained silicon-germanium wire tri-gate metal-oxide-semiconductor field-effect transistors with nickel-germanosilicide metal source and drain. Appl Phys Express, 2010, 3:124201 doi: 10.1143/APEX.3.124201
[10]	Schreyer T A, Saraswat K C. A two-dimensional analytical model of the cross-bridge Kelvin resistor. IEEE Electron Device Lett, 1986, 7:661 doi: 10.1109/EDL.1986.26511
[11]	Varahramyan K, Verret E J. A model for specific contact resistance applicable for titanium silicide-silicon contacts. Solid-State Electron, 1996, 39:1601 doi: 10.1016/0038-1101(96)00091-3
[12]	Nur O, Willander M, Turan R, et al. Electrical and structural characterization of PtSi/p-Si_1-xGe_x low Schottky barrier junctions prepared by co-sputtering. J Vac Sci Technol B, 1997, 15:241 doi: 10.1116/1.589272
[13]	Qiu Z, Zhang Z, Ostling M, et al. A comparative study of two different schemes to dopant segregation at NiSi/SI and PtSi/Si interfaces for Schottky barrier height lowering. IEEE Electron Devices, 2008, 55:396 doi: 10.1109/TED.2007.911080

Fig. 1. Schematic fabrication procedure of four-terminal Kelvin structure. (a) Standard chemical cleaning. (b) The capping layer deposition. (c) The capping layer etching (active area opening). (d) The Ni(Pt)SiGe formation. (e) AlSiCu alloy electrode formation.

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Fig. 2. SEM images of Kelvin structure (a) before and (b) after the AlSiCu electrode deposition. The inset in Fig. 2(a) shows the geometrical parameters of the Kelvin structure.

DownLoad: Full-Size Img PowerPoint

Fig. 3. The $I$-$V$ curves of Ni(Pt)SiGe/Si$_{1-x}$Ge$_{x}$ junctions with the boron doping concentration of 5 $\times$ 10$^{17}$ cm$^{-3}$.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (a) The specific contact resistance of the Ni(Pt)SiGe/Si$_{1-x}$Ge$_{x}$ junctions as a function of Ge fraction with the different boron doping concentrations. (b) Experimental and theoretical results of the contact resistance ratio of Ni(Pt)SiGe/Si$_{1-x}$Ge$_{x}$ junctions versus Ge fraction. $\rho_{\rm c1}$, $\rho_{\rm c2}$ are the contact resistivity of the Ni(Pt)SiGe/Si$_{1-x}$Ge$_{x}$ junctions with the doping concentration of 4 $\times$ 10$^{19}$ cm$^{-3}$ and 5 $\times$ 10$^{17}$ cm$^{-3}$, respectively.

DownLoad: Full-Size Img PowerPoint

[1]	Wang C, Snyder J P, Tucker J R. Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistor. Appl Phys Lett, 1999, 74:1174 doi: 10.1063/1.123477
[2]	Iwai H, Ohguro T, Ohmi S. NiSi salicide technology for scaled CMOS. Microelectron Eng, 2002, 60:157 doi: 10.1016/S0167-9317(01)00684-0
[3]	Liehr M, Schmid P E, LeGoues F K, et al. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si (111). Phys Rev Lett, 1985, 54:2139 doi: 10.1103/PhysRevLett.54.2139
[4]	Weber W M, Geelhaar L, Graham A P, et al. Silicon-nanowire transistor with intruded nickel-silicide contacts. Nano Lett, 2006, 6:2660 doi: 10.1021/nl0613858
[5]	Luo J, Qiu Z J, Zhang Z, et al. Interaction of NiSi with dopants for metallic source/drain applications. J Vac Sci Technol B, 2010, 28:c1i1 doi: 10.1116/1.3248267
[6]	Liu J, Ozturk M C. Nickel germanosilicide contacts formed on heavily boron doped Si_1-xGe_x source/drain junctions for nanoscale CMOS. IEEE Trans Electron Devices, 2005, 52:1535 doi: 10.1109/TED.2005.850613
[7]	Jarmar T, Ericson F, Smith U, et al. Influence of germanium on the formation of NiSi_1-xGe_x on (111)-oriented Si_1-xGe_x. J Appl Phys, 2005, 98:053507 doi: 10.1063/1.2034081
[8]	Xiang W F. Erbium germanosilicide ohmic contacts on Si_1-xGe_x (x=0-0.3) substrates. Science China:Phys Mechan. & Astron, 2011, 54:1116
[9]	Ikeda K, Oda M, Kamimuta Y, et al. Hole-mobility and drive-current enhancement in Ge-rich strained silicon-germanium wire tri-gate metal-oxide-semiconductor field-effect transistors with nickel-germanosilicide metal source and drain. Appl Phys Express, 2010, 3:124201 doi: 10.1143/APEX.3.124201
[10]	Schreyer T A, Saraswat K C. A two-dimensional analytical model of the cross-bridge Kelvin resistor. IEEE Electron Device Lett, 1986, 7:661 doi: 10.1109/EDL.1986.26511
[11]	Varahramyan K, Verret E J. A model for specific contact resistance applicable for titanium silicide-silicon contacts. Solid-State Electron, 1996, 39:1601 doi: 10.1016/0038-1101(96)00091-3
[12]	Nur O, Willander M, Turan R, et al. Electrical and structural characterization of PtSi/p-Si_1-xGe_x low Schottky barrier junctions prepared by co-sputtering. J Vac Sci Technol B, 1997, 15:241 doi: 10.1116/1.589272
[13]	Qiu Z, Zhang Z, Ostling M, et al. A comparative study of two different schemes to dopant segregation at NiSi/SI and PtSi/Si interfaces for Schottky barrier height lowering. IEEE Electron Devices, 2008, 55:396 doi: 10.1109/TED.2007.911080

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Received: 03 January 2013 Revised: 11 July 2013 Online: Published: 01 December 2013

Article Navigation > Journal of Semiconductors > 2013 > 34(12): 123002

Wenfeng Xiang, Kun Liu, Kun Zhao, Shouxian Zhong. Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors[J]. Journal of Semiconductors, 2013, 34(12): 123002. doi: 10.1088/1674-4926/34/12/123002 ****W F Xiang, K Liu, K Zhao, S X Zhong. Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors[J]. J. Semicond., 2013, 34(12): 123002. doi: 10.1088/1674-4926/34/12/123002.

Citation:

Wenfeng Xiang, Kun Liu, Kun Zhao, Shouxian Zhong. Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors[J]. Journal of Semiconductors, 2013, 34(12): 123002. doi: 10.1088/1674-4926/34/12/123002 ****

W F Xiang, K Liu, K Zhao, S X Zhong. Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-xGex substrates for Schottky source/drain transistors[J]. J. Semicond., 2013, 34(12): 123002. doi: 10.1088/1674-4926/34/12/123002.

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Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors

DOI: 10.1088/1674-4926/34/12/123002

1.
College of Science, China University of Petroleum, Beijing 102249, China
2.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Funds:

Project supported by the National Natural Science Foundation of China (No. 11004251) and the Development Foundation of China University of Petroleum (Beijing) (No. 01JB021)

the Development Foundation of China University of Petroleum (Beijing) 01JB021

the National Natural Science Foundation of China 11004251

More Information

Corresponding author: Xiang Wenfeng, wfxiang@cup.edu.cn
Received Date: 2013-01-03
Revised Date: 2013-07-11
Published Date: 2013-12-01

Abstract

Abstract

The electrical properties of Ni_0.95Pt_0.05-germanosilicide/Si_1-xGe_x contacts on heavily doped p-type strained Si_1-xGe_x layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional complementary metal-oxide-semiconductor (CMOS) process to measure contact resistance. The results showed that the contact resistance of the Ni_0.95Pt_0.05-germanosilicide/Si_1-xGe_x contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10¹⁹ cm^-3 is nearly one order of magnitude lower than that of the samples with doping concentration of 5×10¹⁷ cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.
- specific contact resistivity,
- Ni(Pt) germanosilicide,
- Ge fraction,
- doping concentration

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References(13)

References

[1]	Wang C, Snyder J P, Tucker J R. Sub-40 nm PtSi Schottky source/drain metal-oxide-semiconductor field-effect transistor. Appl Phys Lett, 1999, 74:1174 doi: 10.1063/1.123477
[2]	Iwai H, Ohguro T, Ohmi S. NiSi salicide technology for scaled CMOS. Microelectron Eng, 2002, 60:157 doi: 10.1016/S0167-9317(01)00684-0
[3]	Liehr M, Schmid P E, LeGoues F K, et al. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si (111). Phys Rev Lett, 1985, 54:2139 doi: 10.1103/PhysRevLett.54.2139
[4]	Weber W M, Geelhaar L, Graham A P, et al. Silicon-nanowire transistor with intruded nickel-silicide contacts. Nano Lett, 2006, 6:2660 doi: 10.1021/nl0613858
[5]	Luo J, Qiu Z J, Zhang Z, et al. Interaction of NiSi with dopants for metallic source/drain applications. J Vac Sci Technol B, 2010, 28:c1i1 doi: 10.1116/1.3248267
[6]	Liu J, Ozturk M C. Nickel germanosilicide contacts formed on heavily boron doped Si_1-xGe_x source/drain junctions for nanoscale CMOS. IEEE Trans Electron Devices, 2005, 52:1535 doi: 10.1109/TED.2005.850613
[7]	Jarmar T, Ericson F, Smith U, et al. Influence of germanium on the formation of NiSi_1-xGe_x on (111)-oriented Si_1-xGe_x. J Appl Phys, 2005, 98:053507 doi: 10.1063/1.2034081
[8]	Xiang W F. Erbium germanosilicide ohmic contacts on Si_1-xGe_x (x=0-0.3) substrates. Science China:Phys Mechan. & Astron, 2011, 54:1116
[9]	Ikeda K, Oda M, Kamimuta Y, et al. Hole-mobility and drive-current enhancement in Ge-rich strained silicon-germanium wire tri-gate metal-oxide-semiconductor field-effect transistors with nickel-germanosilicide metal source and drain. Appl Phys Express, 2010, 3:124201 doi: 10.1143/APEX.3.124201
[10]	Schreyer T A, Saraswat K C. A two-dimensional analytical model of the cross-bridge Kelvin resistor. IEEE Electron Device Lett, 1986, 7:661 doi: 10.1109/EDL.1986.26511
[11]	Varahramyan K, Verret E J. A model for specific contact resistance applicable for titanium silicide-silicon contacts. Solid-State Electron, 1996, 39:1601 doi: 10.1016/0038-1101(96)00091-3
[12]	Nur O, Willander M, Turan R, et al. Electrical and structural characterization of PtSi/p-Si_1-xGe_x low Schottky barrier junctions prepared by co-sputtering. J Vac Sci Technol B, 1997, 15:241 doi: 10.1116/1.589272
[13]	Qiu Z, Zhang Z, Ostling M, et al. A comparative study of two different schemes to dopant segregation at NiSi/SI and PtSi/Si interfaces for Schottky barrier height lowering. IEEE Electron Devices, 2008, 55:396 doi: 10.1109/TED.2007.911080

Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors

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Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors

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Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors

Ni(Pt) germanosilicide contacts formed on heavily boron doped Si_1-xGe_x substrates for Schottky source/drain transistors