Fig. 1.
Input-output relationship for different TID under (a) HDR of 0.5 Gy(Si)/s and (b) LDR of 1 $\times$ 10$^{-3}$ Gy(Si)/s at operating bias.
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| Citation: |
Xin Wang, Wu Lu, Qi Guo, Xue Wu, Shanbin Xi, Wei Deng, Jiangwei Cui, Jinxin Zhang. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors, 2013, 34(12): 124006. doi: 10.1088/1674-4926/34/12/124006
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X Wang, W Lu, Q Guo, X Wu, S B Xi, W Deng, J W Cui, J X Zhang. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. J. Semicond., 2013, 34(12): 124006. doi: 10.1088/1674-4926/34/12/124006.
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Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
DOI: 10.1088/1674-4926/34/12/124006
More Information
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Abstract
A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.-
Keywords:
- digital-to-analog,
- CBCMOS,
- dose rate effect,
- ionizing radiation
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References
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