J. Semicond. > 2013, Volume 34 > Issue 2 > 023001
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SEMICONDUCTOR MATERIALS

Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

Said Benramache1, Foued Chabane2, Boubaker Benhaoua3 and Fatima Z. Lemmadi2

+ Author Affiliations

 Corresponding author: Said Benramache, benramache.said@gmail.com

DOI: 10.1088/1674-4926/34/2/023001

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Abstract: This paper examines the growth of ZnO thin films on glass substrate at 350℃ using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented. The maximum value of grain size G=63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω·cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350℃ has been reported.

Key words: ZnO, thin film, growth time, ultrasonic spray technique



[1]
Zhang Y, Wu C, Zheng Y, et al. Synthesis and efficient field emission characteristics of patterned ZnO nanowires. Journal of Semiconductors, 2012, 33(2):023001 doi: 10.1088/1674-4926/33/2/023001
[2]
Wu Y, Zhang L, Xie G, et al. Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates. Solid State Commun, 2008, 148(2):247
[3]
Zhang H, Liu H, Lei C, et al. Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films. Journal of Semiconductors, 2010, 31(8):083005 doi: 10.1088/1674-4926/31/8/083005
[4]
Ji Z, Mao Q, Ke W. Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering. Solid State Commun, 2010, 150(8):1919 http://cat.inist.fr/?aModele=afficheN&cpsidt=23242033
[5]
Li W J, Kong C Y, Ruan H B, et al. Electrical properties and Raman scattering investigation of Ag doped ZnO thin films. Solid State Commun, 2012, 152(2):147 doi: 10.1016/j.ssc.2011.10.006
[6]
Ye Z, Yuan G, Li B, et al. Fabrication and characteristics of ZnO thin films with Al/Si (100) substrates. Mater Chem Phys, 2005, 93(2):170
[7]
Meng X, Lin B, Gu B, et al. A simple growth route towards ZnO thin films and nanorods. Solid State Commun, 2005, 135(3):411 http://cat.inist.fr/?aModele=afficheN&cpsidt=16972517
[8]
El Manouni A, Manjon F J, Perales M, et al. Effect of thermal annealing on ZnO:Al thin films grown by spray pyrolysis. Superlattices and Microstructures, 2007, 42(2):134 http://personales.upv.es/~fjmanjon/sm42_134.pdf
[9]
Benramache S, Benhaoua B, Chabane F. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films. Journal of Semiconductors, 2012, 33(9):093001 doi: 10.1088/1674-4926/33/9/093001
[10]
Vernardou D, Kenanakis G, Couris S, et al. The effect of growth time on the morphology of ZnO structures deposited on Si (100) by the aqueous chemical growth technique. J Cryst Growth, 2007, 308(2):105
[11]
Mekhanache M, Drici A, Hamideche L S, et al. Properties of ZnO thin films deposited on (glass, ITO and ZnO:Al) substrates. Superl Micros, 2011, 49(3):510 http://adsabs.harvard.edu/abs/2011SuMi...49..510M
[12]
Zhang C. High-quality oriented ZnO films grown by sol-gel process assisted with ZnO. Journal of Physics and Chemistry of Solids, 2010, 71(2):364
[13]
Nian H, Hahn S H, Koo K K, et al. Sol-gel derived N-doped ZnO thin films. Mater Lett, 2009, 63(10):2246 http://www.sciencedirect.com/science/article/pii/S0167577X09005631
[14]
Ben Ayadi Z, El Mir L, Djessas K, et al. Effect of the annealing temperature on transparency and conductivity of ZnO:Al thin films. Thin Solid Films, 2009, 517(22):6305 http://www.sciencedirect.com/science/article/pii/S0040609009003460
[15]
Wu S P, Zhao Q Y, Zheng L Q, et al. Behaviors of ZnO-doped silver thick film and silver grain growth mechanism. Solid State Sci, 2011, 13(3):548 doi: 10.1016/j.solidstatesciences.2010.12.024
[16]
Jain A, Sagar P, Mehra R M. Band gap widening and narrowing in moderately and heavily doped n-ZnO films. Solid-State Electron, 2006, 50(2):1420
[17]
Daranfed W, Aida M S, Hafdallah A, et al. Substrate temperature influence on ZnS thin films prepared by ultrasonic spray. Thin Solid Films, 2009, 518(3):1082 http://adsabs.harvard.edu/abs/2009TSF...518.1082D
[18]
Zhang D H, Yang T L, Ma J, et al. Preparation of transparent conducting ZnO:Al films on polymersubstrates by r. f. magnetron sputtering. Appl Surf Sci, 2000, 158(1):43
[19]
Hafdallah A, Yanineb F, Aida M S, et al. In doped ZnO thin films. Journal of Alloys and Compounds, 2011, 509(18):7267 http://www.sciencedirect.com/science/article/pii/S0925838811008954
Fig. 1.  X-ray diffraction spectra of ZnO thin films grown at various times, the films deposited on glass substrate at Ts D 350 ℃.

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Fig. 2.  Variation of grain size and mean strain of ZnO thin films with growth time

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Fig. 3.  Transmission spectra of ZnO thin films as a function of growth time.

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Fig. 4.  The typical variation of .Ah$\nu $/2 as a function of photon energy of ZnO films with growth time.

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Fig. 5.  Variation of the band-gap energy and the Urbach energy of ZnO thin films as a function of growth time.

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Fig. 6.  Electrical resistivity $\rho $ of ZnO thin films grown at various times, the films deposited on glass substrate at Ts D 350 ℃.

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Table 1.   Bragg angle 2$\theta $, the full width at half-maximum FWHM $\beta $, the grain size G, lattice parameters c and a, the strain$\varepsilon $ for (002) plane, band gap energy Eg, Urbach energy Eu and electrical resistivity $\rho $ for ZnO thin films were measured as a function of growth time.
[1]
Zhang Y, Wu C, Zheng Y, et al. Synthesis and efficient field emission characteristics of patterned ZnO nanowires. Journal of Semiconductors, 2012, 33(2):023001 doi: 10.1088/1674-4926/33/2/023001
[2]
Wu Y, Zhang L, Xie G, et al. Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates. Solid State Commun, 2008, 148(2):247
[3]
Zhang H, Liu H, Lei C, et al. Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films. Journal of Semiconductors, 2010, 31(8):083005 doi: 10.1088/1674-4926/31/8/083005
[4]
Ji Z, Mao Q, Ke W. Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering. Solid State Commun, 2010, 150(8):1919 http://cat.inist.fr/?aModele=afficheN&cpsidt=23242033
[5]
Li W J, Kong C Y, Ruan H B, et al. Electrical properties and Raman scattering investigation of Ag doped ZnO thin films. Solid State Commun, 2012, 152(2):147 doi: 10.1016/j.ssc.2011.10.006
[6]
Ye Z, Yuan G, Li B, et al. Fabrication and characteristics of ZnO thin films with Al/Si (100) substrates. Mater Chem Phys, 2005, 93(2):170
[7]
Meng X, Lin B, Gu B, et al. A simple growth route towards ZnO thin films and nanorods. Solid State Commun, 2005, 135(3):411 http://cat.inist.fr/?aModele=afficheN&cpsidt=16972517
[8]
El Manouni A, Manjon F J, Perales M, et al. Effect of thermal annealing on ZnO:Al thin films grown by spray pyrolysis. Superlattices and Microstructures, 2007, 42(2):134 http://personales.upv.es/~fjmanjon/sm42_134.pdf
[9]
Benramache S, Benhaoua B, Chabane F. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films. Journal of Semiconductors, 2012, 33(9):093001 doi: 10.1088/1674-4926/33/9/093001
[10]
Vernardou D, Kenanakis G, Couris S, et al. The effect of growth time on the morphology of ZnO structures deposited on Si (100) by the aqueous chemical growth technique. J Cryst Growth, 2007, 308(2):105
[11]
Mekhanache M, Drici A, Hamideche L S, et al. Properties of ZnO thin films deposited on (glass, ITO and ZnO:Al) substrates. Superl Micros, 2011, 49(3):510 http://adsabs.harvard.edu/abs/2011SuMi...49..510M
[12]
Zhang C. High-quality oriented ZnO films grown by sol-gel process assisted with ZnO. Journal of Physics and Chemistry of Solids, 2010, 71(2):364
[13]
Nian H, Hahn S H, Koo K K, et al. Sol-gel derived N-doped ZnO thin films. Mater Lett, 2009, 63(10):2246 http://www.sciencedirect.com/science/article/pii/S0167577X09005631
[14]
Ben Ayadi Z, El Mir L, Djessas K, et al. Effect of the annealing temperature on transparency and conductivity of ZnO:Al thin films. Thin Solid Films, 2009, 517(22):6305 http://www.sciencedirect.com/science/article/pii/S0040609009003460
[15]
Wu S P, Zhao Q Y, Zheng L Q, et al. Behaviors of ZnO-doped silver thick film and silver grain growth mechanism. Solid State Sci, 2011, 13(3):548 doi: 10.1016/j.solidstatesciences.2010.12.024
[16]
Jain A, Sagar P, Mehra R M. Band gap widening and narrowing in moderately and heavily doped n-ZnO films. Solid-State Electron, 2006, 50(2):1420
[17]
Daranfed W, Aida M S, Hafdallah A, et al. Substrate temperature influence on ZnS thin films prepared by ultrasonic spray. Thin Solid Films, 2009, 518(3):1082 http://adsabs.harvard.edu/abs/2009TSF...518.1082D
[18]
Zhang D H, Yang T L, Ma J, et al. Preparation of transparent conducting ZnO:Al films on polymersubstrates by r. f. magnetron sputtering. Appl Surf Sci, 2000, 158(1):43
[19]
Hafdallah A, Yanineb F, Aida M S, et al. In doped ZnO thin films. Journal of Alloys and Compounds, 2011, 509(18):7267 http://www.sciencedirect.com/science/article/pii/S0925838811008954

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    Received: 05 August 2012 Revised: 11 September 2012 Online: Published: 01 February 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(2): 023001
      Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001 ****S Benramache, F Chabane, B Benhaoua, F Z Lemmadi. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. J. Semicond., 2013, 34(2): 023001. doi:  10.1088/1674-4926/34/2/023001.
      Citation:
      Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001 ****
      S Benramache, F Chabane, B Benhaoua, F Z Lemmadi. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. J. Semicond., 2013, 34(2): 023001. doi:  10.1088/1674-4926/34/2/023001.
      shu

      Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

      DOI: 10.1088/1674-4926/34/2/023001
      • 1.

        Material Sciences Laboratory, Faculty of Science, University of Biskra, 07000, Algeria

      • 2.

        Mechanical Engineering, Faculty of Technology, University of Biskra, 07000, Algeria

      • 3.

        Physics Laboratory, Institute of Technology, University of El-oued, 39000, Algeria

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      • Corresponding author: Said Benramache, benramache.said@gmail.com
      • Received Date: 2012-08-05
      • Revised Date: 2012-09-11
      • Published Date: 2013-02-01

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