Fig. 1.
(a) XRD patterns of the (In0.95-xSnxFe0.05)2O3 films.(b) The corresponding lattice constants for films with different Sndoping. The inset gives the relative position of the (440) peak for each film.
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| Citation: |
Pengfei Xing, Yanxue Chen, Shaohua Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. Journal of Semiconductors, 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002
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P F Xing, Y X Chen, S H Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. J. Semicond., 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002.
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Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films
DOI: 10.1088/1674-4926/34/2/023002
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Abstract
Room-temperature ferromagnetism was observed in (In0.95-xSnxFe0.05)2O3 (x=0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism. -
References
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