Fig. 1.
IR transmission microscopy of CdMnTe:In wafers (a) before annealing and (b) after annealing.
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| Citation: |
Jijun Zhang, Linjun Wang, Jiahua Min, Kaifeng Qin, Zhubin Shi, Xiaoyan Liang. Te vapor annealing of indium-doped CdMnTe crystals[J]. Journal of Semiconductors, 2013, 34(3): 033002. doi: 10.1088/1674-4926/34/3/033002
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J J Zhang, L J Wang, J H Min, K F Qin, Z B Shi, X Y Liang. Te vapor annealing of indium-doped CdMnTe crystals[J]. J. Semicond., 2013, 34(3): 033002. doi: 10.1088/1674-4926/34/3/033002.
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Te vapor annealing of indium-doped CdMnTe crystals
DOI: 10.1088/1674-4926/34/3/033002
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Abstract
Thermal annealing in Te vapor atmosphere was adopted to improve the properties of indium-doped Cd1-xMnxTe (x=0.2, CdMnTe) wafers grown by the vertical Bridgman method. The wafers before and after annealing were characterized by measuring the Te inclusions, etch pit density (EPD), Mn composition, resistivity, and impurity. IR transmission microscopy and EPD measurements revealed that the densities of Te inclusions reduced from (5-9)×104 cm-3 to (2-4)×104 cm-3 and EPD from 105 cm-2 to 104 cm-2 after annealing. NIR transmission spectroscopy showed that the Mn composition increased by 0.002-0.005 mole fractions during the annealing. The resistivity of the wafers improved from (2.0-4.5)×108 Ω·cm to (1.7-3.8)×109 Ω·cm, which suggested that the deep-level donor of Te antisites was successfully introduced after annealing. Inductively coupled plasma-mass spectrometry (ICP-MS) revealed that the concentrations of impurities in the wafer decreased, which indicated the purifying effects of Te vapor annealing on the wafers. All the results demonstrate that the Te vapor annealing of the indium-doped CdMnTe crystal has positive effects on the crystallinity, resistivity and purity of CdMnTe wafers.-
Keywords:
- Cd1-xMnxTe,
- indium dopant,
- Te vapor annealing,
- resistivity,
- impurity
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References
[1] Burger A, Chattopadhyay K, Chen H, et al. Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma-ray detectors. J Cryst Growth, 1999, 198/199:872 doi: 10.1016/S0022-0248(98)01171-3[2] Hossain A, Cui Y, Bolotnikov A E, et al. Vanadium-doped cadmium manganese telluride (Cd(1-x)Mn(x)Te) crystals as X-and gamma-ray detectors. J Electron Mater, 2009, 38:1593 doi: 10.1007/s11664-009-0780-9[3] Trivedi S B, Wang C C, Kutcher S, et al. Crystal growth technology of binary and ternary Ⅱ-Ⅵ semiconductors for photonic applications. J Cryst Growth, 2008, 310:1099 doi: 10.1016/j.jcrysgro.2007.12.032[4] Yang G, Bolotnikov A E, Li L, et al. Investigation of cadmium manganese telluride crystals for room-temperature radiation detection. J Electron Mater, 2010, 39:1053 doi: 10.1007/s11664-009-1050-6[5] Schlesinger T E, Toney J E, Yoon H, et al. Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater Sci Eng R, 2001, 32:103 doi: 10.1016/S0927-796X(01)00027-4[6] Zhang J J, Jie W Q, Wang T, et al. Growth and characterization of In doped Cd0.8Mn0.2Te single crystal. J Cryst Growth, 2007, 306:33 doi: 10.1016/j.jcrysgro.2007.03.044[7] Fochuk P, Panchuk O, Feychuk P, et al. Indium dopant behavior in CdTe single crystals. Nucl Instrum Methods A, 2001, 458:104 doi: 10.1016/S0168-9002(00)00926-8[8] Fiederle M, Eiche C, Salk M, et al. Modified compensation model for CdTe. J Appl Phys, 1998, 84:6689 doi: 10.1063/1.368874[9] Kim K H, Bolotinikov A E, Camarda G S, et al. Defect levels of semi-insulating CdMnTe:In crystals. J Appl Phys, 2011, 109:113715 doi: 10.1063/1.3594715[10] Berding M A. Annealing conditions for intrinsic CdTe. Appl Phys Lett, 1999, 74:552 doi: 10.1063/1.123142[11] Yu P F, Jie W Q, Wang T. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals. Nucl Instrum Methods A, 2011, 643:53 doi: 10.1016/j.nima.2011.02.092[12] Yang G, Bolotnikov A E, Cui Y, et al. Impurity gettering effect of Te inclusions in CdZnTe single crystals. J Cryst Growth, 2008, 311:99 doi: 10.1016/j.jcrysgro.2008.09.201[13] Smithells C J. Metals reference book. 5th ed. Butterworths:London & Boston, 1976[14] Zhang J J, Jie W Q, Luan L J, et al. Evaluation of Mn uniformity in CdMnTe crystal grown by the vertical Bridgman method. J Electron Mater, 2008, 37:1158 doi: 10.1007/s11664-008-0473-9[15] Berding M A. Native defects in CdTe. Phys Rev B, 1999, 60:8943 doi: 10.1103/PhysRevB.60.8943[16] Schieber M, Schlesinger T E, James R B, et al. Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals. J Cryst Growth, 2002, 237-239:2082 doi: 10.1016/S0022-0248(01)02314-4 -
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