Fig. 1.
Schematic structures of samples A, B and C.
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| Citation: |
Zhao Si, Tongbo Wei, Ning Zhang, Jun Ma, Junxi Wang, Jinmin Li. Improvement of carrier distribution in dual wavelength light-emitting diodes[J]. Journal of Semiconductors, 2013, 34(5): 054008. doi: 10.1088/1674-4926/34/5/054008
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Z Si, T B Wei, N Zhang, J Ma, J X Wang, J M Li. Improvement of carrier distribution in dual wavelength light-emitting diodes[J]. J. Semicond., 2013, 34(5): 054008. doi: 10.1088/1674-4926/34/5/054008.
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Improvement of carrier distribution in dual wavelength light-emitting diodes
DOI: 10.1088/1674-4926/34/5/054008
More Information
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Abstract
The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.-
Keywords:
- LED,
- dual wavelength,
- quantum barrier,
- holes injection,
- carrier distribution
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References
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