Fig. 1.
Measured (symbols) and modeled (solid lines) output characteristics with $V_{\rm GS}$ from $-20.1$ to $-0.1$ V.
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| Citation: |
Shu Shen. Design of basic digital circuit blocks based on an OFET device charge model[J]. Journal of Semiconductors, 2013, 34(5): 055003. doi: 10.1088/1674-4926/34/5/055003
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S Shen. Design of basic digital circuit blocks based on an OFET device charge model[J]. J. Semicond., 2013, 34(5): 055003. doi: 10.1088/1674-4926/34/5/055003.
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Design of basic digital circuit blocks based on an OFET device charge model
DOI: 10.1088/1674-4926/34/5/055003
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Abstract
An OFET charge model, as well as its parameter extraction method are presented. The fitting results are also discussed and different OFET model characters are compared. Some basic OFET based digital circuit blocks, including the inverter, NAND, and ring oscillator are also developed, which would be considered to be helpful to the design of relevant applications. -
References
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