J. Semicond. > 2013, Volume 34 > Issue 7 > 076003

SEMICONDUCTOR TECHNOLOGY

Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation

Kai Han, Xueli Ma, Hong Yang and Wenwu Wang

+ Author Affiliations

 Corresponding author: Han Kai, hankai@ime.ac.cn

DOI: 10.1088/1674-4926/34/7/076003

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Abstract: The effect of Al incorporation on the effective work function (EWF) of TiN metal gate was systematically investigated. Metal-oxide-semiconductor (MOS) capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose. Different thickness ratios of Al to TiN and different post metal annealing (PMA) conditions were employed. Significant shift of work function towards to Si conduction band was observed, which was suitable for NMOS and the magnitude of shift depends on the processing conditions.

Key words: work function modulation, Al, MOS capacitor, PMA



[1]
Wilk G D, Wallace R M, Anthony J M. High-k gate dielectrics:current status and materials properties considerations. J Appl Phys, 2001, 89(10):5243
[2]
Zhao Y, Masahiro T, Koji K, et al. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. Appl Phys Lett, 2006, 88(7):072904 doi: 10.1063/1.2174840
[3]
Chau R, Brask J, Datta S, et al. Application of high-k gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology. Microelectron Eng, 2005, 80:1 doi: 10.1016/j.mee.2005.04.035
[4]
Narayanan V, Paruchuri V K, Bojarczuk N A, et al. Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group ⅡA and ⅢB elements with gate-first processing for 45 nm and beyond. Dig Tech Pap Symp VLSI Technol, 2006:224
[5]
Masaru K, Takeo M, Seiichi M, et al. Effective-work-function control by varying the TiN thickness in poly-Si/TiN gate electrodes for scaled high-k CMOSFETs. IEEE Electron Device Lett, 2009, 30(5):466 doi: 10.1109/LED.2009.2016585
[6]
Jörgen W, Gustaf S, Jörgen O. Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes. Microelectron Eng, 2004, 75:389 doi: 10.1016/j.mee.2004.07.061
[7]
Wang Xiaorong, Jiang Yulong, Xie Qi. Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure. Microelectron Eng, 2011, 88:573 doi: 10.1016/j.mee.2010.06.029
Fig. 1.  Vfb versus EOT curves for samples with and w/o Al incorporation on terraced-SiO2 undergoing FGA only.

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Fig. 2.  Vfb versus EOT curves for samples (a) w/o Al incorporation, (b) 5 nm Al with 10 nm bottom TiN, (c) 5 nm Al with 5 nm bottom TiN undergoing FGA and different PMA conditions.

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Fig. 3.  C –V plots of the sample with W/TiN/5 nmAl/5 nmTiN/ALDHfO2/Si structure undergoing different PMA conditions.

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Fig. 4.  C –V plots of the sample with W/TiN/4 nm Al/3 nm TiN/ALDHfO2/Si structure undergoing different PMA conditions.

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Fig. 5.  C –V plots of the sample with W/TiN/4 nm Al/3 nm TiN/ALDHfO2/Si structure undergoing annealing suitable for PMOS and different PMA conditions.

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[1]
Wilk G D, Wallace R M, Anthony J M. High-k gate dielectrics:current status and materials properties considerations. J Appl Phys, 2001, 89(10):5243
[2]
Zhao Y, Masahiro T, Koji K, et al. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. Appl Phys Lett, 2006, 88(7):072904 doi: 10.1063/1.2174840
[3]
Chau R, Brask J, Datta S, et al. Application of high-k gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology. Microelectron Eng, 2005, 80:1 doi: 10.1016/j.mee.2005.04.035
[4]
Narayanan V, Paruchuri V K, Bojarczuk N A, et al. Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group ⅡA and ⅢB elements with gate-first processing for 45 nm and beyond. Dig Tech Pap Symp VLSI Technol, 2006:224
[5]
Masaru K, Takeo M, Seiichi M, et al. Effective-work-function control by varying the TiN thickness in poly-Si/TiN gate electrodes for scaled high-k CMOSFETs. IEEE Electron Device Lett, 2009, 30(5):466 doi: 10.1109/LED.2009.2016585
[6]
Jörgen W, Gustaf S, Jörgen O. Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes. Microelectron Eng, 2004, 75:389 doi: 10.1016/j.mee.2004.07.061
[7]
Wang Xiaorong, Jiang Yulong, Xie Qi. Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure. Microelectron Eng, 2011, 88:573 doi: 10.1016/j.mee.2010.06.029

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    Received: 23 October 2012 Revised: 13 February 2013 Online: Published: 01 July 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(7): 076003
      Kai Han, Xueli Ma, Hong Yang, Wenwu Wang. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation[J]. Journal of Semiconductors, 2013, 34(7): 076003. doi: 10.1088/1674-4926/34/7/076003 ****K Han, X L Ma, H Yang, W W Wang. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation[J]. J. Semicond., 2013, 34(7): 076003. doi: 10.1088/1674-4926/34/7/076003.
      Citation:
      Kai Han, Xueli Ma, Hong Yang, Wenwu Wang. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation[J]. Journal of Semiconductors, 2013, 34(7): 076003. doi: 10.1088/1674-4926/34/7/076003 ****
      K Han, X L Ma, H Yang, W W Wang. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation[J]. J. Semicond., 2013, 34(7): 076003. doi: 10.1088/1674-4926/34/7/076003.
      shu

      Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation

      DOI: 10.1088/1674-4926/34/7/076003

      • Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      the Important National Science & Technology Specific Projects of China 2009ZX02035

      the National Natural Science Foundation of China 61176091

      Project supported by the Important National Science & Technology Specific Projects of China (No. 2009ZX02035) and the National Natural Science Foundation of China (Nos. 61176091, 50932001)

      the National Natural Science Foundation of China 50932001

      More Information
      • Corresponding author: Han Kai, hankai@ime.ac.cn
      • Received Date: 2012-10-23
      • Revised Date: 2013-02-13
      • Published Date: 2013-07-01

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