Fig. 1.
Novel SOI-based miniature electric field sensor structure diagram.
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| Citation: |
Wei Liu, Pengfei Yang, Chunrong Peng, Dongming Fang, Shanhong Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. Journal of Semiconductors, 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005
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W Liu, P F Yang, C R Peng, D M Fang, S H Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. J. Semicond., 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005.
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A new fabrication process for the SOI-based miniature electric field sensor
DOI: 10.1088/1674-4926/34/8/086005
More Information
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Abstract
This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO2 layer. Compared with the CO2 critical point release method, it significantly improves the device surface cleanliness and shortens the process flow. The impurity on the base layer is analyzed. The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice. This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors, gyroscopes, and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.-
Keywords:
- electrostatic field sensor,
- SOI,
- sacrificial layer release,
- polyimide,
- DRIE
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References
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