Fig. 1.
The cross section of the RF LDMOS
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| Citation: |
Ting Yu, Ling Luo. An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J]. Journal of Semiconductors, 2013, 34(9): 094007. doi: 10.1088/1674-4926/34/9/094007
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T Yu, L Luo. An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J]. J. Semicond., 2013, 34(9): 094007. doi: 10.1088/1674-4926/34/9/094007.
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An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
DOI: 10.1088/1674-4926/34/9/094007
More Information
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Abstract
Two types of RF LDMOS devices, specified for application in the driver stage and output stage of a power amplifier, are designed based on a modified CMOS process. By optimizing the layout and process, the output capacitance per unit of gate width is as low as 225 fF/mm. The driver stage and output stage devices achieve an output power of 44 W with a PAE of 82% and 230 W with a PAE of 72.3%, respectively (P3dB compression) at 1 GHz. Both devices are capable of withstanding extremely severe ruggedness tests without any performance degradation. These tests are 3-5 dB overdrive, 10:1 voltage standing wave ratio mismatch load through all phase angles, and 40% drain overvoltage elevation at a working point of P3dB.-
Keywords:
- PAE,
- ruggedness,
- RF LDMOS,
- CMOS,
- output power
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References
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