J. Semicond. > 2013, Volume 34 > Issue 9 > 095006
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SEMICONDUCTOR INTEGRATED CIRCUITS

W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology

Hongfei Yao, Xiantai Wang, Danyu Wu, Yongbo Su, Yuxiong Cao, Ji Ge, Xiaoxi Ning and Zhi Jin

+ Author Affiliations

 Corresponding author: Jin Zhi, Email:jinzhi@ime.ac.cn

DOI: 10.1088/1674-4926/34/9/095006

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Abstract: A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55×0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion gain above 4.7 dB over 75-80 GHz.

Key words: frequency doubler, W-band, InP, DHBT, push-push



[1]
Puyal V, Konczykowska A, Nouet P. DC-100-GHz frequency doublers in InP DHBT technology. IEEE Trans Microw Theory Tech, 2005, 53(4):1338 doi: 10.1109/TMTT.2005.845766
[2]
An D W, Yu W H, Lv X. Design and analysis of a 2 mm-band tripler based on quartz. J Infrared Millim Wave, 2011, 30(4):377
[3]
Yang T, Xiang X J, Wu W. Broad-band tripler of W-band. J Infrared Millim Wave, 2007, 26(3):161 http://en.cnki.com.cn/Article_en/CJFDTOTAL-HWYH200703000.htm
[4]
Jin Z, Su Y B, Cheng W. High current multi-finger InGaAs/InP double heterojunction bipolar transistor with the maximum oscillation frequency 253 GHz. Chin Phys Lett, 2008, 25(8):3075 doi: 10.1088/0256-307X/25/8/091
[5]
Cheng W, Jin Z, Yu J Y. Design of InGaAsP composite collector for InP DHBT. Chinese Journal of Semiconductors, 2007, 28(6):131 doi: 10.1143/JJAP.43.2243/pdf; jsessionid=8799A660736756D1964EA3A7687F8640.c3.iopscience.cld.iop.org
[6]
Cao Y X, Jin Z, Ge J. A symbolically defined InP double heterojunction bipolar transistor large-signal model. Journal of Semiconductors, 2009, 30(12):37 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=09060503&flag=1
[7]
Kobayashi K W, OKI A K, Tran L T. A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth. IEEE J Solid-State Circuits, 1999, 34(9):1225 doi: 10.1109/4.782080
[8]
Li Q, Wang Z G, Li W. Design of 20-44 GHz broadband doubler MMIC. Journal of Semiconductors, 2010, 31(4):045012 doi: 10.1088/1674-4926/31/4/045012
[9]
Maas S A. Nonlinear microwave and RF circuits. Norwood, MA:Artech House, 2003 http://ci.nii.ac.jp/ncid/BA63628377
[10]
Hung J J, Hancock T M, Rebeiz G M. High-power high-efficiency SiGe Ku-and Ka-band balanced frequency doublers. IEEE Trans Microw Theory Tech, 2005, 53(2):754 doi: 10.1109/TMTT.2004.840615
[11]
Campos-Roca Y, Verweyen L, Fernández-Barciela M. 38/76 GHz PHEMT MMIC balanced frequency doublers in coplanar technology. IEEE Microw Wireless Compon Lett, 2000, 10(11):484 http://cat.inist.fr/?aModele=afficheN&cpsidt=819389
[12]
Liu G, Ulusoy A C, Trasser A. 60-80 GHz frequency doubler operating close to fmax. APMC, 2010:770
Fig. 1.  Progress cross section of InP DHBTs technology.

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Fig. 2.  Electrical scheme of frequency doubler.

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Fig. 3.  Frequency doubling core based on push-push configuration.

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Fig. 4.  Collector current modeled as a train of rectified cosine pulses.

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Fig. 5.  The collector currents of Q9, Q10.

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Fig. 6.  Total collector current of the two transistors Q9, Q10 ($I_{\rm c1}+I_{\rm c2})$.

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Fig. 7.  The stabilizing resistors and modeled inter-connecting lines between current sources and differential pairs.

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Fig. 8.  Simulated (a) frequency spectrum and (b) wave form of the output signal.

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Fig. 9.  Microphotograph of the MMIC frequency doubler (0.55 $\times$ 0.5 mm$^{2})$.

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Fig. 10.  Test setup for on-wafer measurement of the W-band doubler.

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Fig. 11.  Output spectrums of the frequency doubler when the input frequency is 40 GHz.

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Fig. 12.  Output spectrums of the frequency doubler over 10 MHz-42 GHz when the input frequency is 40 GHz.

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Fig. 13.  Measured output power, conversion gain and suppression of $f_{0}$ versus input power at 80 GHz.

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Fig. 14.  Measured output power and conversion gain over 75-80 GHz.

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Table 1.   Performance summary and comparison.
[1]
Puyal V, Konczykowska A, Nouet P. DC-100-GHz frequency doublers in InP DHBT technology. IEEE Trans Microw Theory Tech, 2005, 53(4):1338 doi: 10.1109/TMTT.2005.845766
[2]
An D W, Yu W H, Lv X. Design and analysis of a 2 mm-band tripler based on quartz. J Infrared Millim Wave, 2011, 30(4):377
[3]
Yang T, Xiang X J, Wu W. Broad-band tripler of W-band. J Infrared Millim Wave, 2007, 26(3):161 http://en.cnki.com.cn/Article_en/CJFDTOTAL-HWYH200703000.htm
[4]
Jin Z, Su Y B, Cheng W. High current multi-finger InGaAs/InP double heterojunction bipolar transistor with the maximum oscillation frequency 253 GHz. Chin Phys Lett, 2008, 25(8):3075 doi: 10.1088/0256-307X/25/8/091
[5]
Cheng W, Jin Z, Yu J Y. Design of InGaAsP composite collector for InP DHBT. Chinese Journal of Semiconductors, 2007, 28(6):131 doi: 10.1143/JJAP.43.2243/pdf; jsessionid=8799A660736756D1964EA3A7687F8640.c3.iopscience.cld.iop.org
[6]
Cao Y X, Jin Z, Ge J. A symbolically defined InP double heterojunction bipolar transistor large-signal model. Journal of Semiconductors, 2009, 30(12):37 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=09060503&flag=1
[7]
Kobayashi K W, OKI A K, Tran L T. A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth. IEEE J Solid-State Circuits, 1999, 34(9):1225 doi: 10.1109/4.782080
[8]
Li Q, Wang Z G, Li W. Design of 20-44 GHz broadband doubler MMIC. Journal of Semiconductors, 2010, 31(4):045012 doi: 10.1088/1674-4926/31/4/045012
[9]
Maas S A. Nonlinear microwave and RF circuits. Norwood, MA:Artech House, 2003 http://ci.nii.ac.jp/ncid/BA63628377
[10]
Hung J J, Hancock T M, Rebeiz G M. High-power high-efficiency SiGe Ku-and Ka-band balanced frequency doublers. IEEE Trans Microw Theory Tech, 2005, 53(2):754 doi: 10.1109/TMTT.2004.840615
[11]
Campos-Roca Y, Verweyen L, Fernández-Barciela M. 38/76 GHz PHEMT MMIC balanced frequency doublers in coplanar technology. IEEE Microw Wireless Compon Lett, 2000, 10(11):484 http://cat.inist.fr/?aModele=afficheN&cpsidt=819389
[12]
Liu G, Ulusoy A C, Trasser A. 60-80 GHz frequency doubler operating close to fmax. APMC, 2010:770

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    Received: 06 February 2013 Revised: 26 March 2013 Online: Published: 01 September 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(9): 095006
      Hongfei Yao, Xiantai Wang, Danyu Wu, Yongbo Su, Yuxiong Cao, Ji Ge, Xiaoxi Ning, Zhi Jin. W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology[J]. Journal of Semiconductors, 2013, 34(9): 095006. doi: 10.1088/1674-4926/34/9/095006 ****H F Yao, X T Wang, D Y Wu, Y B Su, Y X Cao, J Ge, X X Ning, Z Jin. W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology[J]. J. Semicond., 2013, 34(9): 095006. doi: 10.1088/1674-4926/34/9/095006.
      Citation:
      Hongfei Yao, Xiantai Wang, Danyu Wu, Yongbo Su, Yuxiong Cao, Ji Ge, Xiaoxi Ning, Zhi Jin. W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology[J]. Journal of Semiconductors, 2013, 34(9): 095006. doi: 10.1088/1674-4926/34/9/095006 ****
      H F Yao, X T Wang, D Y Wu, Y B Su, Y X Cao, J Ge, X X Ning, Z Jin. W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology[J]. J. Semicond., 2013, 34(9): 095006. doi: 10.1088/1674-4926/34/9/095006.
      shu

      W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology

      DOI: 10.1088/1674-4926/34/9/095006

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Basic Research Program of China (No. 2010CB327502)

      the National Basic Research Program of China 2010CB327502

      More Information
      • Corresponding author: Jin Zhi, Email:jinzhi@ime.ac.cn
      • Received Date: 2013-02-06
      • Revised Date: 2013-03-26
      • Published Date: 2013-09-01

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