Fig. 1.
AFM images with 5 $\times $ 5 $\mu $ m$^{2}$ scans of LED samples with p-GaN grown at (a) 130 Torr and (b) 400 Torr.
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| Citation: |
Binglei Fu, Naixin Liu, Zhe Liu, Jinmin Li, Junxi Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. Journal of Semiconductors, 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007
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B L Fu, N X Liu, Z Liu, J M Li, J X Wang. Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J]. J. Semicond., 2014, 35(11): 114007. doi: 10.1088/1674-4926/35/11/114007.
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Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
DOI: 10.1088/1674-4926/35/11/114007
More Information
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Abstract
The advantages of InGaN/GaN light emitting diodes (LEDs) with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures. The LED efficiency thus could be enhanced with high pressure grown p-GaN layers.-
Keywords:
- light emitting diodes,
- V-defects,
- growth pressure,
- p-GaN
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References
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