J. Semicond. > 2014, Volume 35 > Issue 11 > 115006
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SEMICONDUCTOR INTEGRATED CIRCUITS

A high linearity dual-band mixer for IMT-A and UWB systems

Xusheng Tang, Xiaoyu Wang, Jiang Yang, Xin Tang and Fengyi Huang

+ Author Affiliations

 Corresponding author: Tang Xusheng, Email:txshcumt@163.com

DOI: 10.1088/1674-4926/35/11/115006

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Abstract: The design and analysis of a reconfigurable dual-band down-conversion mixer for IMT-advanced (3.4-3.6 GHz) and UWB (4.2-4.8 GHz) applications are presented. Based on a folded double-balanced Gilbert cell, which is well known for its low voltage, simplicity and well balanced performance, the mixer adopts a capacitive cross-coupling technique for input matching and performance improvement. Switched capacitors and resistors are added to shift the working bands. Fabricated in a TSMC 0.13 μm process, the test results show flat conversion gains from 9.6 to 10.3 dB on the IMT-A band and from 9.7 to 10.4 dB on the UWB band, with a noise figure of about 15 dB on both bands. The input third-order intercept points (ⅡP3) are about 7.3 dBm on both of the frequency bands. The whole chip consumes 11 mW under 1.2 V supply and the total area of the layout is 0.76×0.65 mm2.

Key words: mixer, IMT advanced, UWB, IIP3, conversion gain, noise figure



[1]
Tang Xin, Huang Fengyi, Tang Xusheng, et al. A wideband 0.13μm CMOS LC-VCO for IMT-advanced and UWB applications. J. Semiconduct., 2013, 34(1):015004 doi: 10.1088/1674-4926/34/1/015004
[2]
Li T. Design and realization of dual-band mixer for IMT-advanced and UWB systems. Nanjing: Southeast University, 2010
[3]
Wu Yiqiang, Wang Zhigong, Xu Jian, et al. Design of a novel mixer with high gain and linearity improvement for DRM/DAB applications. J. Semiconduct., 2013, 34(1):015005 doi: 10.1088/1674-4926/34/1/015005
[4]
Li T, Huang F Y, Wang Y, et al. A high linearity reconfigurable down-conversion mixer for dual-band applications. IEEE International Symposium on Signals Systems and Electronics (ISSSE), 2010, 1:1
[5]
Fu D L, Huang L, Du H L, et al. A 0. 18μm CMOS high linearity flat conversion gain down-conversion mixer for UWB receiver. 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT, 2008: 1492
[6]
Choi K, Dong H S, Yue C P. A 1.2-V, 5.8-mW, ultra wideband folded mixer in 0.13-μm CMOS. IEEE Radio Frequency Integrated Circuit Symposium, June 2007:489
[7]
Brandolini M, Rossi P, Sanzogni D, et al. A +78 dBm ⅡP 2 CMOS direct downconversion mixer for fully integrated UMTS receivers. Solid-State Circuits, 2006, 41(3):552 doi: 10.1109/JSSC.2005.864123
[8]
Zhou W, Embabi S, de Gyvez J P, et al. Using capacitive cross-coupling technique in RF low-noise amplifiers and down-conversion mixer design. Proc 26rd Eur Solid-State Circuits Conf, Stockholm, Sweden, 2000:77
[9]
Manstretta D. High linearity down-conversion CMOS mixers. IEEE EuMIC, 2008:175
[10]
Darabi H, Abidi A A. Noise in RF-CMOS mixers:a simple physical model. Solid-State Circuits, 2000, 35(1):15 doi: 10.1109/4.818916
[11]
Terrovitis M T, Meyer R G. Intermodulation distortion in current-commutating CMOS mixers. Solid-State Circuits, 2000, 35(10):1461 doi: 10.1109/4.871323
[12]
Wang R L, Su Y K, Liu C H, et al. A concurrent dual-band mixer with on-wafer balun for multi-standard applications. IEEE Asia Pacific Conference on APCCAS, 2008:304
[13]
Na D H, Kim T W. A 1.2 V, 0.87-3.7 GHz wideband low-noise mixer using a current mirror for multiband application. IEEE Microw Wireless Compon Lett, 2012, 22(2):91 doi: 10.1109/LMWC.2011.2182186
[14]
Zijie H. A 1-to-10-GHz RF and wideband IF cross-coupled Gilbert mixer in 0.13-μm CMOS. IEEE Trans Circuits Syst Ⅱ:Express Briefs, 2013, 60(11):726 doi: 10.1109/TCSII.2013.2278130
[15]
Feng W S, Yeh C I, Chatterjee P, et al. Design for a UWB down-conversion mixer for multi-band applications. The Ninth International Conference on Wireless and Mobile Communications, ICWMC, 2013:56
Fig. 1.  Schematic diagram of the proposed mixer

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Fig. 2.  Capacitive cross-coupling technique

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Fig. 3.  Conversion gain and noise figure versus bias current of the gm stage at 10 MHz

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Fig. 4.  Topology of current-commutating stage

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Fig. 5.  Conversion gain, noise figure and IIP3 versus LO power

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Fig. 6.  Photograph of the designed mixer

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Fig. 7.  Mixer power gain in (a) IMT-A band and (b) UWB band

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Fig. 8.  IM3 test on (a) IMT-advanced and (b) UWB bands

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Fig. 9.  Noise figure test on (a) IMT-advanced and (b) UWB bands

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Table 1.   Summary of mixer performance and comparison
[1]
Tang Xin, Huang Fengyi, Tang Xusheng, et al. A wideband 0.13μm CMOS LC-VCO for IMT-advanced and UWB applications. J. Semiconduct., 2013, 34(1):015004 doi: 10.1088/1674-4926/34/1/015004
[2]
Li T. Design and realization of dual-band mixer for IMT-advanced and UWB systems. Nanjing: Southeast University, 2010
[3]
Wu Yiqiang, Wang Zhigong, Xu Jian, et al. Design of a novel mixer with high gain and linearity improvement for DRM/DAB applications. J. Semiconduct., 2013, 34(1):015005 doi: 10.1088/1674-4926/34/1/015005
[4]
Li T, Huang F Y, Wang Y, et al. A high linearity reconfigurable down-conversion mixer for dual-band applications. IEEE International Symposium on Signals Systems and Electronics (ISSSE), 2010, 1:1
[5]
Fu D L, Huang L, Du H L, et al. A 0. 18μm CMOS high linearity flat conversion gain down-conversion mixer for UWB receiver. 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT, 2008: 1492
[6]
Choi K, Dong H S, Yue C P. A 1.2-V, 5.8-mW, ultra wideband folded mixer in 0.13-μm CMOS. IEEE Radio Frequency Integrated Circuit Symposium, June 2007:489
[7]
Brandolini M, Rossi P, Sanzogni D, et al. A +78 dBm ⅡP 2 CMOS direct downconversion mixer for fully integrated UMTS receivers. Solid-State Circuits, 2006, 41(3):552 doi: 10.1109/JSSC.2005.864123
[8]
Zhou W, Embabi S, de Gyvez J P, et al. Using capacitive cross-coupling technique in RF low-noise amplifiers and down-conversion mixer design. Proc 26rd Eur Solid-State Circuits Conf, Stockholm, Sweden, 2000:77
[9]
Manstretta D. High linearity down-conversion CMOS mixers. IEEE EuMIC, 2008:175
[10]
Darabi H, Abidi A A. Noise in RF-CMOS mixers:a simple physical model. Solid-State Circuits, 2000, 35(1):15 doi: 10.1109/4.818916
[11]
Terrovitis M T, Meyer R G. Intermodulation distortion in current-commutating CMOS mixers. Solid-State Circuits, 2000, 35(10):1461 doi: 10.1109/4.871323
[12]
Wang R L, Su Y K, Liu C H, et al. A concurrent dual-band mixer with on-wafer balun for multi-standard applications. IEEE Asia Pacific Conference on APCCAS, 2008:304
[13]
Na D H, Kim T W. A 1.2 V, 0.87-3.7 GHz wideband low-noise mixer using a current mirror for multiband application. IEEE Microw Wireless Compon Lett, 2012, 22(2):91 doi: 10.1109/LMWC.2011.2182186
[14]
Zijie H. A 1-to-10-GHz RF and wideband IF cross-coupled Gilbert mixer in 0.13-μm CMOS. IEEE Trans Circuits Syst Ⅱ:Express Briefs, 2013, 60(11):726 doi: 10.1109/TCSII.2013.2278130
[15]
Feng W S, Yeh C I, Chatterjee P, et al. Design for a UWB down-conversion mixer for multi-band applications. The Ninth International Conference on Wireless and Mobile Communications, ICWMC, 2013:56

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    Received: 12 April 2014 Revised: 16 June 2014 Online: Published: 01 November 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(11): 115006
      Xusheng Tang, Xiaoyu Wang, Jiang Yang, Xin Tang, Fengyi Huang. A high linearity dual-band mixer for IMT-A and UWB systems[J]. Journal of Semiconductors, 2014, 35(11): 115006. doi: 10.1088/1674-4926/35/11/115006 ****X S Tang, X Y Wang, J Yang, X Tang, F Y Huang. A high linearity dual-band mixer for IMT-A and UWB systems[J]. J. Semicond., 2014, 35(11): 115006. doi: 10.1088/1674-4926/35/11/115006.
      Citation:
      Xusheng Tang, Xiaoyu Wang, Jiang Yang, Xin Tang, Fengyi Huang. A high linearity dual-band mixer for IMT-A and UWB systems[J]. Journal of Semiconductors, 2014, 35(11): 115006. doi: 10.1088/1674-4926/35/11/115006 ****
      X S Tang, X Y Wang, J Yang, X Tang, F Y Huang. A high linearity dual-band mixer for IMT-A and UWB systems[J]. J. Semicond., 2014, 35(11): 115006. doi: 10.1088/1674-4926/35/11/115006.
      shu

      A high linearity dual-band mixer for IMT-A and UWB systems

      DOI: 10.1088/1674-4926/35/11/115006

      • RF & OEIC Research Institute, National Mobile Communications Research Laboratory, Southeast University, Nanjing 210096, China

      Funds:

      Project supported by the National Science and Technology Major Special Project (No. 2012ZX03001-019)

      the National Science and Technology Major Special Project 2012ZX03001-019

      More Information
      • Corresponding author: Tang Xusheng, Email:txshcumt@163.com
      • Received Date: 2014-04-12
      • Revised Date: 2014-06-16
      • Published Date: 2014-11-01

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