Fig. 1.
Simulated and measured $S$ parameters
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| Citation: |
Zhiqun Cheng, Minshi Jia, Ya Luan, Xinxiang Lian. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure[J]. Journal of Semiconductors, 2014, 35(12): 125005. doi: 10.1088/1674-4926/35/12/125005
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Z Q Cheng, M S Jia, Y Luan, X X Lian. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure[J]. J. Semicond., 2014, 35(12): 125005. doi: 10.1088/1674-4926/35/12/125005.
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Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure
DOI: 10.1088/1674-4926/35/12/125005
More Information
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Abstract
The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds=28 V, Vgs=-3.5 V at the frequency of 5.5 GHz.-
Keywords:
- GaN HEMT,
- modeling,
- power amplifier,
- wideband,
- negative feedback
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References
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