J. Semicond. > 2014, Volume 35 > Issue 4 > 043001
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SEMICONDUCTOR MATERIALS

Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions

Suzhen Wu1, Zanhong Deng1, 2, Weiwei Dong1, 2, Jingzhen Shao1, 2 and Xiaodong Fang1, 2,

+ Author Affiliations

 Corresponding author: Fang Xiaodong, Email: xdfang@aiofm.ac.cn

DOI: 10.1088/1674-4926/35/4/043001

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Abstract: CuAlO2 thin films have been prepared by the chemical solution deposition method on both n-Si and p-Si substrates. X-ray diffraction analysis indicates that the obtained CuAlO2 films have a single delafossite structure. The current transport properties of the resultant p-CuAlO2/n-Si and p-CuAlO2/p-Si heterojunctions are investigated by current-voltage measurements. The p-CuAlO2/n-Si has a rectifying ratio of~35 within the applied voltages of -3.0 to +3.0 V, while the p-CuAlO2/p-Si shows Schottky diode-like characteristics, dominated in forward bias by the flow of space-charge-limited current.

Key words: CuAlO2, heterojunction, current-voltage characteristic



[1]
Kawazoe H, Yasukawa M, Hyodo H, et al. P-type electrical conduction in transparent thin films of CuAlO2. Nature, 1997, 389(45):939 http://www.doc88.com/p-97836672960.html
[2]
Tate J, Ju H L, Moon J C, et al. Origin of p-type conduction in single-crystal CuAlO2. Phys Rev B, 2009, 80(16):165206 doi: 10.1103/PhysRevB.80.165206
[3]
Dittrich T, Dloczik L, Guminskaya T, et al. Photovoltage characterization of CuAlO2 crystallites. Appl Phys Lett, 2004, 85(5):742 doi: 10.1063/1.1776611
[4]
Zheng X G, Taniguchi K, Takahashi A, et al. Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2. Appl Phys Lett, 2004, 85(10):1728 doi: 10.1063/1.1784888
[5]
Banerjee A N, Chattopadhyay K K. Low-threshold field emission from transparent p-type conducting CuAlO2 thin film prepared by dc sputtering. Appl Surf Sci, 2004, 225:243 doi: 10.1016/j.apsusc.2003.10.009
[6]
Banerjee A N, Nandy S, Ghosh C K, et al. Fabrication and characterization of all-oxide heterojunction p-CuAlO2+x/n-Zn1-xAlxO transparent diode for potential application in "invisible electronics". Thin Solid Films, 2007, 515:7324 doi: 10.1016/j.tsf.2007.02.087
[7]
Chi C T, Cheng I C, Chen J Z. Bandgap tuning of MgZnO in flexible transparent n+-ZnO:Al/n-MgZnO/p-CuAlOx:Ca diodes on polyethylene terephthalate substrates. J Alloys Compd, 2012, 544:111 doi: 10.1016/j.jallcom.2012.08.004
[8]
Banerjee A N, Joo S W, Min B K. Quantum size effect in the photoluminescence properties of p-type semiconducting transparent CuAlO2 nanoparticles. J Appl Phys, 2012, 112(11):114329 doi: 10.1063/1.4768933
[9]
Banerjee A N, Maity R, Ghosh P K, et al. Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films. Thin Solid Films, 2005, 474(1/2):261 http://www.academia.edu/7378812/Thermoelectric_properties_and_electrical_characteristics_of_sputter-deposited_p-CuAlO2_thin_films
[10]
Koriche N, Bouguelia A, Aider A, et al. Photocatalytic hydrogen evolution over delafossite CuAlO2. Int J Hydrogen Energ, 2005, 30(7):693 doi: 10.1016/j.ijhydene.2004.06.011
[11]
Ling B, Zhao J L, Sun X W, et al. Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions. Appl Phys Lett, 2010, 97(1):013101 doi: 10.1063/1.3459963
[12]
Ling B, Sun X W, Zhao J L, et al. Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E, 2009, 41:635 doi: 10.1016/j.physe.2008.10.017
[13]
Zhao Yiping, Dong Weiwei, Fang Xiaodong, et al. P-type Ca doped SrCu2O2 thin film:synthesis, optical property and photovoltaic application. J Alloys Compd, 2012, 513:50 doi: 10.1016/j.jallcom.2011.09.067
[14]
Dong G B, Zhang M, Lan W, et al. Synthesis and characteristics of p-CuAlO2/n-Si heterostructure. J Mater Sci:Mater Electron, 2009, 20:193 doi: 10.1007/s10854-008-9697-y
[15]
Dong G B, Zhang M, Li Y C, et al. Synthesis and electrical properties of p-CuCr0.91Mg0.09O2/n-Si p-n junction. Chin J Nonferrous Met, 2013, 23(1):128 doi: 10.1016/S1003-6326(13)62438-3
[16]
Deng Z H, Fang X D, Tao R H, et al. The influence of growth temperature and oxygen on the phase compositions of CuAlO2 thin films prepared by pulsed laser deposition. J Alloys Compd, 2008, 466(1/2):408 http://cat.inist.fr/?aModele=afficheN&cpsidt=20751077
[17]
Deng Z H, Fang X D, Tao R H, et al. Effect of Cu excess on the electrical properties of CuxAlO2 (1≤ x ≤ 1.06). Journal of Semiconductors, 2008, 29(6):1052
[18]
Deng Z H, Zhu X B, Tao R H, et al. Synthesis of CuAlO2 ceramics using sol-gel. Mater Lett, 2007, 61(3):686 doi: 10.1016/j.matlet.2006.05.042
[19]
Li G, Zhu X B, Lei H C, et al. Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method. J Sol-Gel Sci Technol, 2010, 53:641 doi: 10.1007/s10971-009-2143-7
[20]
Hoffman R L, Wagera J F, Jayaraj M K, et al. Electrical characterization of transparent p-i-n heterojunction diodes. J Appl Phys, 2001, 90(11):5763 doi: 10.1063/1.1413710
[21]
Anthopoulos T D, Shafai T S. Electrical properties of a-nickel phthalocyanine/aluminium interfaces:effects of oxygen doping and thermal annealing. J Phys Chem Solids, 2003, 64:1217 doi: 10.1016/S0022-3697(03)00062-3
[22]
Dutta M, Basak D. p-ZnO/n-Si heterojunction:sol-gel fabrication, photoresponse properties, and transport mechanism. Appl Phys Lett, 2008, 92(21):212112 doi: 10.1063/1.2937124
[23]
Yao Z Q, He B, Zhang L, et al. Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent CuO alloying. Appl Phys Lett, 2012, 100(6):062102 doi: 10.1063/1.3683499
[24]
Höffling B, Schleife A, Rödl C, et al. Band discontinuities at Si-TCO interfaces from quasiparticle calculations:comparison of two alignment approaches. Phys Rev B, 2012, 85(3):035305 doi: 10.1103/PhysRevB.85.035305
[25]
Farag A A M. Structure and transport mechanisms of Si/porous Si n-p junctions prepared by liquid phase epitaxy. Appl Surf Sci, 2009, 255(6):3493 doi: 10.1016/j.apsusc.2008.09.083
[26]
Pellicer-Porres J, Segura A, Kim D. Refractive index of the CuAlO2 delafossite. Semicond Sci Technol, 2009, 24(1):015002 doi: 10.1088/0268-1242/24/1/015002
Fig. 1.  XRD patterns of CAO film and Si substrate.

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Fig. 2.  Surface morphology and cross-section (inset) of CAO thin film on a Si substrate.

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Fig. 3.  Temperature dependence of the resistivity of the CAO film deposited on an n-Si substrate; the inset is a semilog plot of conductivity ($\sigma )$ versus 1/$T$.

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Fig. 4.  $I$-$V$ curve of the p-CAO/n-Si heterojunction; the insets are the corresponding semilog $I$-$V$ curve and the schematic diagram of electrode settings.

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Fig. 5.  $I$-$V$ curve of the p-CAO/p-Si heterojunction; the inset is the corresponding log($I$)-log($V$) curve.

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Fig. 6.  Band diagrams of (a)-(c) p-CAO/n-Si and (d)-(f) p-CAO/p-Si at equilibrium and under bias.

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Fig. 7.  Plot of 1/$C^{2}$ versus bias voltage ($V$) for (a) p-CAO/p-Si and (b) p-CAO/n-Si heterojunctions.

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[1]
Kawazoe H, Yasukawa M, Hyodo H, et al. P-type electrical conduction in transparent thin films of CuAlO2. Nature, 1997, 389(45):939 http://www.doc88.com/p-97836672960.html
[2]
Tate J, Ju H L, Moon J C, et al. Origin of p-type conduction in single-crystal CuAlO2. Phys Rev B, 2009, 80(16):165206 doi: 10.1103/PhysRevB.80.165206
[3]
Dittrich T, Dloczik L, Guminskaya T, et al. Photovoltage characterization of CuAlO2 crystallites. Appl Phys Lett, 2004, 85(5):742 doi: 10.1063/1.1776611
[4]
Zheng X G, Taniguchi K, Takahashi A, et al. Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2. Appl Phys Lett, 2004, 85(10):1728 doi: 10.1063/1.1784888
[5]
Banerjee A N, Chattopadhyay K K. Low-threshold field emission from transparent p-type conducting CuAlO2 thin film prepared by dc sputtering. Appl Surf Sci, 2004, 225:243 doi: 10.1016/j.apsusc.2003.10.009
[6]
Banerjee A N, Nandy S, Ghosh C K, et al. Fabrication and characterization of all-oxide heterojunction p-CuAlO2+x/n-Zn1-xAlxO transparent diode for potential application in "invisible electronics". Thin Solid Films, 2007, 515:7324 doi: 10.1016/j.tsf.2007.02.087
[7]
Chi C T, Cheng I C, Chen J Z. Bandgap tuning of MgZnO in flexible transparent n+-ZnO:Al/n-MgZnO/p-CuAlOx:Ca diodes on polyethylene terephthalate substrates. J Alloys Compd, 2012, 544:111 doi: 10.1016/j.jallcom.2012.08.004
[8]
Banerjee A N, Joo S W, Min B K. Quantum size effect in the photoluminescence properties of p-type semiconducting transparent CuAlO2 nanoparticles. J Appl Phys, 2012, 112(11):114329 doi: 10.1063/1.4768933
[9]
Banerjee A N, Maity R, Ghosh P K, et al. Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films. Thin Solid Films, 2005, 474(1/2):261 http://www.academia.edu/7378812/Thermoelectric_properties_and_electrical_characteristics_of_sputter-deposited_p-CuAlO2_thin_films
[10]
Koriche N, Bouguelia A, Aider A, et al. Photocatalytic hydrogen evolution over delafossite CuAlO2. Int J Hydrogen Energ, 2005, 30(7):693 doi: 10.1016/j.ijhydene.2004.06.011
[11]
Ling B, Zhao J L, Sun X W, et al. Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions. Appl Phys Lett, 2010, 97(1):013101 doi: 10.1063/1.3459963
[12]
Ling B, Sun X W, Zhao J L, et al. Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E, 2009, 41:635 doi: 10.1016/j.physe.2008.10.017
[13]
Zhao Yiping, Dong Weiwei, Fang Xiaodong, et al. P-type Ca doped SrCu2O2 thin film:synthesis, optical property and photovoltaic application. J Alloys Compd, 2012, 513:50 doi: 10.1016/j.jallcom.2011.09.067
[14]
Dong G B, Zhang M, Lan W, et al. Synthesis and characteristics of p-CuAlO2/n-Si heterostructure. J Mater Sci:Mater Electron, 2009, 20:193 doi: 10.1007/s10854-008-9697-y
[15]
Dong G B, Zhang M, Li Y C, et al. Synthesis and electrical properties of p-CuCr0.91Mg0.09O2/n-Si p-n junction. Chin J Nonferrous Met, 2013, 23(1):128 doi: 10.1016/S1003-6326(13)62438-3
[16]
Deng Z H, Fang X D, Tao R H, et al. The influence of growth temperature and oxygen on the phase compositions of CuAlO2 thin films prepared by pulsed laser deposition. J Alloys Compd, 2008, 466(1/2):408 http://cat.inist.fr/?aModele=afficheN&cpsidt=20751077
[17]
Deng Z H, Fang X D, Tao R H, et al. Effect of Cu excess on the electrical properties of CuxAlO2 (1≤ x ≤ 1.06). Journal of Semiconductors, 2008, 29(6):1052
[18]
Deng Z H, Zhu X B, Tao R H, et al. Synthesis of CuAlO2 ceramics using sol-gel. Mater Lett, 2007, 61(3):686 doi: 10.1016/j.matlet.2006.05.042
[19]
Li G, Zhu X B, Lei H C, et al. Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method. J Sol-Gel Sci Technol, 2010, 53:641 doi: 10.1007/s10971-009-2143-7
[20]
Hoffman R L, Wagera J F, Jayaraj M K, et al. Electrical characterization of transparent p-i-n heterojunction diodes. J Appl Phys, 2001, 90(11):5763 doi: 10.1063/1.1413710
[21]
Anthopoulos T D, Shafai T S. Electrical properties of a-nickel phthalocyanine/aluminium interfaces:effects of oxygen doping and thermal annealing. J Phys Chem Solids, 2003, 64:1217 doi: 10.1016/S0022-3697(03)00062-3
[22]
Dutta M, Basak D. p-ZnO/n-Si heterojunction:sol-gel fabrication, photoresponse properties, and transport mechanism. Appl Phys Lett, 2008, 92(21):212112 doi: 10.1063/1.2937124
[23]
Yao Z Q, He B, Zhang L, et al. Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent CuO alloying. Appl Phys Lett, 2012, 100(6):062102 doi: 10.1063/1.3683499
[24]
Höffling B, Schleife A, Rödl C, et al. Band discontinuities at Si-TCO interfaces from quasiparticle calculations:comparison of two alignment approaches. Phys Rev B, 2012, 85(3):035305 doi: 10.1103/PhysRevB.85.035305
[25]
Farag A A M. Structure and transport mechanisms of Si/porous Si n-p junctions prepared by liquid phase epitaxy. Appl Surf Sci, 2009, 255(6):3493 doi: 10.1016/j.apsusc.2008.09.083
[26]
Pellicer-Porres J, Segura A, Kim D. Refractive index of the CuAlO2 delafossite. Semicond Sci Technol, 2009, 24(1):015002 doi: 10.1088/0268-1242/24/1/015002

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    Received: 28 August 2013 Revised: 14 October 2013 Online: Published: 01 April 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(4): 043001
      Suzhen Wu, Zanhong Deng, Weiwei Dong, Jingzhen Shao, Xiaodong Fang. Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions[J]. Journal of Semiconductors, 2014, 35(4): 043001. doi: 10.1088/1674-4926/35/4/043001 ****S Z Wu, Z H Deng, W W Dong, J Z Shao, X D Fang. Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions[J]. J. Semicond., 2014, 35(4): 043001. doi: 10.1088/1674-4926/35/4/043001.
      Citation:
      Suzhen Wu, Zanhong Deng, Weiwei Dong, Jingzhen Shao, Xiaodong Fang. Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions[J]. Journal of Semiconductors, 2014, 35(4): 043001. doi: 10.1088/1674-4926/35/4/043001 ****
      S Z Wu, Z H Deng, W W Dong, J Z Shao, X D Fang. Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions[J]. J. Semicond., 2014, 35(4): 043001. doi: 10.1088/1674-4926/35/4/043001.
      shu

      Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions

      DOI: 10.1088/1674-4926/35/4/043001
      • 1.

        Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China

      • 2.

        Key Laboratory of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China

      Funds:

      the National Natural Science Foundation of China 61306083

      the National Natural Science Foundation of China 51172237

      Project supported by the National Natural Science Foundation of China (Nos. 51172237, 61306083)

      More Information
      • Corresponding author: Fang Xiaodong, Email: xdfang@aiofm.ac.cn
      • Received Date: 2013-08-28
      • Revised Date: 2013-10-14
      • Published Date: 2014-04-01

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