J. Semicond. > 2014, Volume 35 > Issue 4 > 044004
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SEMICONDUCTOR DEVICES

The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs

Minmin Fan, Jingping Xu, Lu Liu and Yurong Bai

+ Author Affiliations

 Corresponding author: Xu Jingping, Email: jpxu@mail.hust.edu.cn

DOI: 10.1088/1674-4926/35/4/044004

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Abstract: The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI n-MOSFETs is investigated on the basis of the density-gradient model in TCAD software. The effects of the channel thickness (Tch) and back-gate bias (Vbg) on the electrical characteristics of GeOI MOSFETs are examined, and the simulated results are compared with those using the conventional semi-classical model. It is shown that when Tch > 8 nm, the electron conduction path of the GeOI MOSFET is closer to the front-gate interface under the QC model than under the CL model, and vice versa when Tch < 8 nm. Thus the electrically controlled ability of the front gate of the devices is influenced by the quantum effect. In addition, the quantum-mechanical mechanism will enhance the drain-induced barrier lowering effect, increase the threshold voltage and decrease the on-state current; for a short channel length (≤ 30 nm), when Tch > 8 nm(or < 8 nm), the quantum-mechanical mechanism mainly impacts the subthreshold slope (or the threshold voltage). Due to the quantum-size effect, the off-state current can be suppressed as the channel thickness decreases.

Key words: GeOI MOSFET, quantum confinement, subthreshold slope, threshold voltage



[1]
Frank D J, Dennard R H, Nowak E, et al. Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE, 2001, 89(3):259 doi: 10.1109/5.915374
[2]
Sharma R, Pandey S, Jain S B. Analytical modeling of drain current and RF performance for double gate fully depleted nano-scale SOI MOSFETS. Journal of Semiconductors, 2012, 33(2):024001 doi: 10.1088/1674-4926/33/2/024001
[3]
Choi Y K, Asano K, Lindert N, et al. Ultrathin-body SOI MOSFET for deep-sub-tenth micro era. IEEE Electron Device Lett, 2000, 21(5):254 doi: 10.1109/55.841313
[4]
Hu Aibin, Xu Qiuxia. Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics. Journal of Semiconductors, 2009, 30(10):104002 doi: 10.1088/1674-4926/30/10/104002
[5]
Le Royer C, Clavelier L, Tabone C, et al. 105 nm gate length pMOSFETs with high-k and metal gate fabricated in a Si process line on 200 mm GeOI wafers. Solid-State Electron, 2008, 52(9):1285 doi: 10.1016/j.sse.2008.04.019
[6]
De Jaeger B, Kaczer B, Zimmerman P, et al. Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference. Semicond Sci Technol, 2007, 22(1):S221 doi: 10.1088/0268-1242/22/1/S52
[7]
Pop E, Chui C O, Dutton R, et al. Electro-thermal comparison and performance optimization of thin-body SOI and GOI MOSFETs. IEEE International Electron Devices Meeting, IEDM Technical Digest, 2004:411 http://ieeexplore.ieee.org/iel5/9719/30682/01419172.pdf
[8]
Bedell S W, Majumdar A, Ott J A, et al. Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs. IEEE Electron Device Lett, 2008, 29(7):811 doi: 10.1109/LED.2008.2000713
[9]
Pala M, Le Royer C, Le Carval G, et al. Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs. Journal of Computational Electronics, 2006, 5(2/3):241 doi: 10.1007/s10825-006-8851-0
[10]
Grandchamp B, Jaud M A, Scheiblin P, et al. In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation. Solid-State Electron, 2011, 57(1):67 doi: 10.1016/j.sse.2010.11.011
[11]
Yu C H, Wu Y S, Hu V P H, et al. Impact of quantum confinement on backgate-bias modulated threshold-voltage and subthreshold characteristics for ultra-thin-body GeOI MOSFETs. IEEE Trans Electron Devices, 2012, 59(7):1851 doi: 10.1109/TED.2012.2194499
[12]
Yu C H, Wu Y S, Hu V P H, et al. Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs. IEEE Trans Nanotechnology, 2012, 11(2):287 doi: 10.1109/TNANO.2011.2169084
[13]
Wu Y S, Hsieh H Y, Hu V P H, et al. Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs. IEEE Electron Device Lett, 2011, 32(1):18 doi: 10.1109/LED.2010.2089425
[14]
Omura Y, Konishi H, Sato S. Quantum-mechanical suppression and enhancement of SCEs in ultrathin SOI MOSFETs. IEEE Trans Electron Devices, 2006, 53(4):677 doi: 10.1109/TED.2006.870274
[15]
Ancona M G, Tiersten H F. Macroscopic physics of the silicon inversion layer. Phys Rev B, Condens Matter, 1987, 35(15):7959 doi: 10.1103/PhysRevB.35.7959
[16]
Ancona M G, Iafrate G J. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys Rev B, Condens Matter, 1989, 39(13):9536 doi: 10.1103/PhysRevB.39.9536
[17]
Wettstein A, Schenk A, Fichtner W. Quantum device-simulation with the density-gradient model on unstructured grids. IEEE Trans Electron Devices, 2001, 48(2):279 doi: 10.1109/16.902727
[18]
Lombardi C, Manzini S, Saporito A, et al. A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans Computer-Aided Design of Integrated Circuits and Systems, 1988, 7(11):1164 doi: 10.1109/43.9186
[19]
Shapiro S D. Carrier mobilities m silicon empirically related to doping and field. Proc IEEE, 1967 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?arnumber=1448053
[20]
Van Den Daele W, Augendre E, Le Royer C, et al. Low-temperature characterization and modeling of advanced GeOI pMOSFETs:mobility mechanisms and origin of the parasitic conduction. Solid-State Electron, 2010, 54(2):205 doi: 10.1016/j.sse.2009.12.020
[21]
Omura Y, Ishiyama T, Shoji M, et al. Quantum mechanical transport characteristics in ultimately miniaturized MOSFETs/SIMOX. Proceedings of the 10th International Symposium on SOI Technology and Development, 1996:199
[22]
Hu V P H, Fan M L, Su P, et al. Band-to-band-tunneling leakage suppression for ultra-thin-body GeOI MOSFETs using transistor stacking. IEEE Electron Device Lett, 2012, 33(2):197 doi: 10.1109/LED.2011.2177955
[23]
Hu V P H, Fan M L, Su P, et al. Leakage-delay analysis of ultra-thin-body GeOI devices and logic circuits. IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2011:1 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5872220&contentType=Conference+Publications&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A5872202%29
Fig. 1.  The schematic structure of a GeOI MOSFET.

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Fig. 2.  The dependence of subthreshold swing on Ge channel thickness.

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Fig. 3.  The electron density distribution in the subthreshold region for GeOI MOSFETs (A1--A2 cross section in Fig. 1. (a) $T_{\rm ch}$ $=$ 5 nm and (b) $T_{\rm ch}$ $=$ 10 nm.

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Fig. 4.  The impact of the back-gate bias ($V_{\rm bg}$) on the subthreshold swing.

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Fig. 5.  Electron density distribution in the subthreshold region of the GeOI MOSFET (A1--A2 cross section in Fig. 1. (a) $V_{\rm bg }$ $=$ $-2$ V. (b) $V_{\rm bg}$ $=$ 2 V.

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Fig. 6.  The influence of Ge channel thickness on the DIBL effect.

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Fig. 7.  (a) Electron density distribution near the source junction (B1--B2 cross section in Fig. 1). (b) Source-to-drain electric-field distribution in the Ge channel at the front-gate interface ($V_{\rm DS }$ $=$ 1 V, $V_{\rm g }=V_{\rm th}$, $L$ $=$30 nm, $T_{\rm ch}$ $=$ 10 nm).

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Fig. 8.  The change in threshold voltage with Ge channel thickness.

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Fig. 9.  The source-to-drain electrostatic-potential distribution in the Ge channel at the front-gate interface. The inset shows the enlarged channel region.

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Fig. 10.  The variation in off-state current (a) and on-state current (b) with $V_{\rm ds}$ under different Ge channel thicknesses.

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[1]
Frank D J, Dennard R H, Nowak E, et al. Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE, 2001, 89(3):259 doi: 10.1109/5.915374
[2]
Sharma R, Pandey S, Jain S B. Analytical modeling of drain current and RF performance for double gate fully depleted nano-scale SOI MOSFETS. Journal of Semiconductors, 2012, 33(2):024001 doi: 10.1088/1674-4926/33/2/024001
[3]
Choi Y K, Asano K, Lindert N, et al. Ultrathin-body SOI MOSFET for deep-sub-tenth micro era. IEEE Electron Device Lett, 2000, 21(5):254 doi: 10.1109/55.841313
[4]
Hu Aibin, Xu Qiuxia. Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics. Journal of Semiconductors, 2009, 30(10):104002 doi: 10.1088/1674-4926/30/10/104002
[5]
Le Royer C, Clavelier L, Tabone C, et al. 105 nm gate length pMOSFETs with high-k and metal gate fabricated in a Si process line on 200 mm GeOI wafers. Solid-State Electron, 2008, 52(9):1285 doi: 10.1016/j.sse.2008.04.019
[6]
De Jaeger B, Kaczer B, Zimmerman P, et al. Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference. Semicond Sci Technol, 2007, 22(1):S221 doi: 10.1088/0268-1242/22/1/S52
[7]
Pop E, Chui C O, Dutton R, et al. Electro-thermal comparison and performance optimization of thin-body SOI and GOI MOSFETs. IEEE International Electron Devices Meeting, IEDM Technical Digest, 2004:411 http://ieeexplore.ieee.org/iel5/9719/30682/01419172.pdf
[8]
Bedell S W, Majumdar A, Ott J A, et al. Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs. IEEE Electron Device Lett, 2008, 29(7):811 doi: 10.1109/LED.2008.2000713
[9]
Pala M, Le Royer C, Le Carval G, et al. Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs. Journal of Computational Electronics, 2006, 5(2/3):241 doi: 10.1007/s10825-006-8851-0
[10]
Grandchamp B, Jaud M A, Scheiblin P, et al. In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation. Solid-State Electron, 2011, 57(1):67 doi: 10.1016/j.sse.2010.11.011
[11]
Yu C H, Wu Y S, Hu V P H, et al. Impact of quantum confinement on backgate-bias modulated threshold-voltage and subthreshold characteristics for ultra-thin-body GeOI MOSFETs. IEEE Trans Electron Devices, 2012, 59(7):1851 doi: 10.1109/TED.2012.2194499
[12]
Yu C H, Wu Y S, Hu V P H, et al. Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs. IEEE Trans Nanotechnology, 2012, 11(2):287 doi: 10.1109/TNANO.2011.2169084
[13]
Wu Y S, Hsieh H Y, Hu V P H, et al. Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs. IEEE Electron Device Lett, 2011, 32(1):18 doi: 10.1109/LED.2010.2089425
[14]
Omura Y, Konishi H, Sato S. Quantum-mechanical suppression and enhancement of SCEs in ultrathin SOI MOSFETs. IEEE Trans Electron Devices, 2006, 53(4):677 doi: 10.1109/TED.2006.870274
[15]
Ancona M G, Tiersten H F. Macroscopic physics of the silicon inversion layer. Phys Rev B, Condens Matter, 1987, 35(15):7959 doi: 10.1103/PhysRevB.35.7959
[16]
Ancona M G, Iafrate G J. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys Rev B, Condens Matter, 1989, 39(13):9536 doi: 10.1103/PhysRevB.39.9536
[17]
Wettstein A, Schenk A, Fichtner W. Quantum device-simulation with the density-gradient model on unstructured grids. IEEE Trans Electron Devices, 2001, 48(2):279 doi: 10.1109/16.902727
[18]
Lombardi C, Manzini S, Saporito A, et al. A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans Computer-Aided Design of Integrated Circuits and Systems, 1988, 7(11):1164 doi: 10.1109/43.9186
[19]
Shapiro S D. Carrier mobilities m silicon empirically related to doping and field. Proc IEEE, 1967 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?arnumber=1448053
[20]
Van Den Daele W, Augendre E, Le Royer C, et al. Low-temperature characterization and modeling of advanced GeOI pMOSFETs:mobility mechanisms and origin of the parasitic conduction. Solid-State Electron, 2010, 54(2):205 doi: 10.1016/j.sse.2009.12.020
[21]
Omura Y, Ishiyama T, Shoji M, et al. Quantum mechanical transport characteristics in ultimately miniaturized MOSFETs/SIMOX. Proceedings of the 10th International Symposium on SOI Technology and Development, 1996:199
[22]
Hu V P H, Fan M L, Su P, et al. Band-to-band-tunneling leakage suppression for ultra-thin-body GeOI MOSFETs using transistor stacking. IEEE Electron Device Lett, 2012, 33(2):197 doi: 10.1109/LED.2011.2177955
[23]
Hu V P H, Fan M L, Su P, et al. Leakage-delay analysis of ultra-thin-body GeOI devices and logic circuits. IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2011:1 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5872220&contentType=Conference+Publications&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A5872202%29

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    Received: 16 September 2013 Revised: 08 November 2013 Online: Published: 01 April 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(4): 044004
      Minmin Fan, Jingping Xu, Lu Liu, Yurong Bai. The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs[J]. Journal of Semiconductors, 2014, 35(4): 044004. doi: 10.1088/1674-4926/35/4/044004 ****M M Fan, J P Xu, L Liu, Y R Bai. The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs[J]. J. Semicond., 2014, 35(4): 044004. doi: 10.1088/1674-4926/35/4/044004.
      Citation:
      Minmin Fan, Jingping Xu, Lu Liu, Yurong Bai. The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs[J]. Journal of Semiconductors, 2014, 35(4): 044004. doi: 10.1088/1674-4926/35/4/044004 ****
      M M Fan, J P Xu, L Liu, Y R Bai. The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs[J]. J. Semicond., 2014, 35(4): 044004. doi: 10.1088/1674-4926/35/4/044004.
      shu

      The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs

      DOI: 10.1088/1674-4926/35/4/044004

      • School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

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      Project supported by the National Natural Science Foundation of China (No. 61274112)

      the National Natural Science Foundation of China 61274112

      More Information
      • Corresponding author: Xu Jingping, Email: jpxu@mail.hust.edu.cn
      • Received Date: 2013-09-16
      • Revised Date: 2013-11-08
      • Published Date: 2014-04-01

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