Fig. 1.
The designed SOI piezoresistive pressure sensor chip. (a) Profile. (b) Front view.
DownLoad:
| Citation: |
Yingping Hong, Ting Liang, Binger Ge, Wei Wang, Tingli Zheng, Sainan Li, Jijun Xiong. A novel algorithmic method for piezoresistance calculation[J]. Journal of Semiconductors, 2014, 35(5): 054009. doi: 10.1088/1674-4926/35/5/054009
****
Y P Hong, T Liang, B E Ge, W Wang, T L Zheng, S N Li, J J Xiong. A novel algorithmic method for piezoresistance calculation[J]. J. Semicond., 2014, 35(5): 054009. doi: 10.1088/1674-4926/35/5/054009.
|
A novel algorithmic method for piezoresistance calculation
DOI: 10.1088/1674-4926/35/5/054009
More Information
-
Abstract
A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance Δ R/R through an integral (the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object) and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.-
Keywords:
- piezoresistance,
- integral,
- piezoresistive pressure sensor,
- accuracy
-
References
[1] Suski J, Mosser V, Goss J. Polysilicon SOI pressure sensor. Sensors and Actuators, 1989, 17(3/4):405[2] Mo C T, Chen C Z, Zhang L L, et al. Temperature compensation of SOS pressure sensor. Journal of Northeastern University (Natural Science), 2004, 25(2):160[3] Zhang S Y, Zhang W L, Zhang S C, et al. The research status of SOI high-temperature pressure sensor. Journal of Hebei University of Technology, 2005, 34(2):14[4] Geng Z Y, Song G Q, Zhang D M. Design of SOI pressure sensor based on MEMS. Sensor World, 2010, (1):28[5] Zhu Z Y, Ji Y J, Yang Y T. High temperature pressure sensor based on SIC films. Journal of Transducer Technology, 2001, 20(2):1[6] Hai C H, Han Z S, Zhou X Y, et al. Study of improved performance of SOI devices and circuits. Chinese Journal of Semiconductor, 2006, 27(S1):322[7] Watanabe M, Tooi A. Applications of SIMOX technology to CMOS LSI and radiation-hardened devices. Jpn J Appl Phys, 1991, 30(4):737[8] Bruel M. Silicon on Insulator material technology. Electron Lett, 1995, 31(14):1201 doi: 10.1049/el:19950805[9] Liu J, Wang M G, Yang W F, et al. Research of plasma immersion ion implantation technology and equipment. Semicond Technol, 2010, 35(7):626[10] Li X, Liu Q. High temperature piezoresistive effect of SIMOX SOI wafer. Instrument Technique and Sensor, 2011, (6):1[11] Sun K, Lu Y, Zhang D X. SOI sensor and its application. Instrument Technique and Sensor, 2009, (Z1):398 -
Proportional views
