Fig. 1.
The transfer functions of a pair of NMOS transistors after different radiation total doses
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Yuxin Wang, Rongbin Hu, Ruzhang Li, Guangbing Chen, Dongbing Fu, Wu Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. Journal of Semiconductors, 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007
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Y X Wang, R B Hu, R Z Li, G B Chen, D B Fu, W Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. J. Semicond., 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007.
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Total dose effects on the matching properties of deep submicron MOS transistors
DOI: 10.1088/1674-4926/35/6/064007
More Information
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Abstract
Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively.-
Keywords:
- radiation,
- total dose,
- MOS,
- mismatch
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References
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