Fig. 1.
Schematic cross section of the conventional RC-IGBT.
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Liheng Zhu, Xingbi Chen. Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT[J]. Journal of Semiconductors, 2014, 35(6): 064009. doi: 10.1088/1674-4926/35/6/064009
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L H Zhu, X B Chen. Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT[J]. J. Semicond., 2014, 35(6): 064009. doi: 10.1088/1674-4926/35/6/064009.
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Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT
DOI: 10.1088/1674-4926/35/6/064009
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Abstract
A physically based equation for predicting required p-emitter length of a snapback-free reverse-conducting insulated gate bipolar transistor (RC-IGBT) with field-stop structure is proposed. The n-buffer resistances above the p-emitter region with anode geometries of linear strip, circular and annular type are calculated, and based on this, the minimum p-emitter lengths of those three geometries are given and verified by simulation. It is found that good agreement was achieved between the numerical calculation and simulation results. Moreover, the calculation results show that the annular case needs the shortest p-emitter length for RC-IGBT to be snapback-free. -
References
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Proportional views
