Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

Liheng Zhu; Xingbi Chen

doi:10.1088/1674-4926/35/7/074003

J. Semicond. > 2014, Volume 35 > Issue 7 > 074003

SEMICONDUCTOR DEVICES

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

Liheng Zhu and Xingbi Chen

+ Author Affiliations

Corresponding author: Zhu Liheng, Email:zhu_li_heng@163.com

DOI: 10.1088/1674-4926/35/7/074003

Abstract: Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anode-short effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J=150 A/cm².

Key words: reverse conducting IGBT, snapback free, turn-off energy, reverse-recovery charge

References

[1]	Rahimo M, Schlapbach U, Schnell R, et al. Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT). Proc EPE, 2009: 1 http://ieeexplore.ieee.org/document/5279012/
[2]	Donnellan B T, Mawby P A, Rahimo M, et al. Introducing a 1200 V vertical merged IGBT and power MOSFET: the HUBFET. APEC, 2012: 152 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6165812
[3]	Minato T, Aono S, Uryu K, et al. Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600 V class SJ-RC-IGBT in a single chip solution. Proc ISPSD, 2012: 137 http://ieeexplore.ieee.org/document/6229042/
[4]	Takahashi H, Yamamoto A, Aono S, et al. 1200 V reverse conducting IGBT. Proc ISPSD, 2004: 133 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1332880
[5]	Zhu L, Chen X. A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode. Proc ISPSD, 2013: 261 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6694436
[6]	Satoh K, lwagami T, Kawafuji H, et al. A new 3 A/600 V transfer mold IPM with RC (reverse conducting)-IGBT. Proc PCIM, 2006: 73 doi: 10.1111/j.1541-4337.2008.00049.x/full
[7]	Voss S, Niedernostheide F, Schulze H. Anode design variation in 1200-V trench field-stop reverse-conducting IGBTs. Proc ISPSD, 2008: 169 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4538925
[8]	Storasta L, Rahimo M, Bellini M, et al. The radial layout design concept for the bi-mode insulated gate transistor. Proc ISPSD, 2011: 56 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5890789
[9]	Mori M, Oyama K, Kohno Y, et al. A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability. IEEE Trans Electron Devices, 2007, 54: 2011 doi: 10.1109/TED.2007.900007
[10]	MEDICI. Two dimensional device simulation program. ed. 2002. 2. 0, Synopsys Inc. , Fremont, CA, 2002

Fig. 1. Schematic cross-sectional view of (a) the conventional RC-IGBT and (b) the novel RC-IGBT and its equivalent circuit.

DownLoad: Full-Size Img PowerPoint

Fig. 2. Current flow lines of proposed RC-IGBT during its forward and reverse conduction states at $J$ $=$ 100 A/cm$^{2}$. (a) Forward conduction state. (b) Reverse conduction state.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Output characteristics of the conventional and proposed RCIGBTs.

DownLoad: Full-Size Img PowerPoint

Fig. 4. Normalized current distributions of the conventional and proposed RC-IGBTs along the cut line of $y$ $=$ 100 $\mu $m (Top: $y$ $=$ 0 $\mu $m, bottom: $y$ $=$ 110 $\mu $m) at $J$ $=$ 100 A/cm$^{2}$.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Turn-off waveforms of the conventional and novel RC-IGBTs. $V_{\rm bus}$ $=$ 600 V, $L_{\rm load}$ $=$ 1 mH, $J$ $=$ 100 A/cm$^{2}$.

DownLoad: Full-Size Img PowerPoint

Fig. 6. Reverse recovery characteristics of the conventional and the novel RC-IGBT. $J_{\rm f}$ $=$ 100 A/cm$^{2}$, $V_{\rm bus}$ $=$ 600 V, d$J_{\rm f}$/d$t$ $=$ 1000 A/$\mu$s$\cdot $cm$^{2}$.

DownLoad: Full-Size Img PowerPoint

Table 1. Device specifications.

Table 2. Key parameters extract from Fig. 5.

Table 3. Key parameters extract from Fig. 6.

[1]	Rahimo M, Schlapbach U, Schnell R, et al. Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT). Proc EPE, 2009: 1 http://ieeexplore.ieee.org/document/5279012/
[2]	Donnellan B T, Mawby P A, Rahimo M, et al. Introducing a 1200 V vertical merged IGBT and power MOSFET: the HUBFET. APEC, 2012: 152 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6165812
[3]	Minato T, Aono S, Uryu K, et al. Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600 V class SJ-RC-IGBT in a single chip solution. Proc ISPSD, 2012: 137 http://ieeexplore.ieee.org/document/6229042/
[4]	Takahashi H, Yamamoto A, Aono S, et al. 1200 V reverse conducting IGBT. Proc ISPSD, 2004: 133 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1332880
[5]	Zhu L, Chen X. A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode. Proc ISPSD, 2013: 261 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6694436
[6]	Satoh K, lwagami T, Kawafuji H, et al. A new 3 A/600 V transfer mold IPM with RC (reverse conducting)-IGBT. Proc PCIM, 2006: 73 doi: 10.1111/j.1541-4337.2008.00049.x/full
[7]	Voss S, Niedernostheide F, Schulze H. Anode design variation in 1200-V trench field-stop reverse-conducting IGBTs. Proc ISPSD, 2008: 169 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4538925
[8]	Storasta L, Rahimo M, Bellini M, et al. The radial layout design concept for the bi-mode insulated gate transistor. Proc ISPSD, 2011: 56 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5890789
[9]	Mori M, Oyama K, Kohno Y, et al. A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability. IEEE Trans Electron Devices, 2007, 54: 2011 doi: 10.1109/TED.2007.900007
[10]	MEDICI. Two dimensional device simulation program. ed. 2002. 2. 0, Synopsys Inc. , Fremont, CA, 2002

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Received: 26 December 2013 Revised: 14 February 2014 Online: Published: 01 July 2014

Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anode-short effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J=150 A/cm².

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

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Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

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