J. Semicond. > 2014, Volume 35 > Issue 7 > 074005
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SEMICONDUCTOR DEVICES

Development of 10 kV 4H-SiC JBS diode with FGR termination

Runhua Huang2, , Yonghong Tao2, Pengfei Cao2, Ling Wang2, Gang Chen1, Song Bai1, Rui Li2, Yun Li1 and Zhifei Zhao1

+ Author Affiliations

 Corresponding author: Huang Runhua, Email:huruhu@hotmail.com

DOI: 10.1088/1674-4926/35/7/074005

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Abstract: The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6×1014 cm-3. The on-state voltage was 2.7 V at JF=13 A/cm2.

Key words: 4H-SiC, JBS diodes, edge termination, floating guard rings



[1]
Millán J, Godignon P. Wide band-gap power semiconductor devices. Spanish Conference on Electron Devices (CDE), 2013: 293 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&tp=&arnumber=4389774&contentType=Journals+%26+Magazines&punumber%3D4123966
[2]
Jayant B B. Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, 8(9): 407 doi: 10.1109/EDL.1987.26676
[3]
Zhao J H, Alexandrov P, Li X. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes. IEEE Electron Device Lett, 2003, 24(6): 402 doi: 10.1109/LED.2003.813370
[4]
Imhoff E A, Hobart K D. High-current 10 kV SiC JBS rectifier performance. Mater Sci Forum, 2008, 600-603: 943 https://zh.scientific.net/MSF.600-603.943.pdf
[5]
Nguyen D M, Huang R, Phung L V, et al. Edge termination design improvements for 10 kV 4H-SiC bipolar diodes. Mater Sci Forum, 2013, 740-742: 609 doi: 10.4028/www.scientific.net/MSF.740-742
[6]
Niwa H, Feng G, Suda J, et al. Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures. 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012: 381 http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6229101
[7]
Huang Runhua, Tao Yonghong, Chen Gang. Simulation, fabrication and characterization of 6500 V 4H-SiC JBS diode. Adv Mater Research, 2014, 846/847: 737 http://www.scientific.net/amr.846-847.737.pdf
[8]
Tao Y H, Huang R H, Chen G, et al. 4.5 kV SiC JBS diodes. Appl Mechan Mater, 2013, 347-350: 1506 doi: 10.4028/www.scientific.net/AMM.347-350
[9]
Li Y, Zhao Z F, Li Z H. Epitaxial growth of SiC epilayers for 10 kV Schottky diodes using chloride-based CVD. Adv Mater Research, 2014, 887/888: 462 doi: 10.4028/www.scientific.net/AMR.887-888
Fig. 1.  Schematic device cross-sectional view of a 10000 V 4H-SiC JBS diode.

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Fig. 2.  Distribution of electric field for reverse bias 10 kV for different ring spacings.

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Fig. 3.  Distribution of electric field for reverse bias 10 kV for different specifies interface charge densities.

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Fig. 4.  Fabricated 10 kV 4H-SiC JBS diodes.

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Fig. 5.  Measured reverse I-V characteristic for different terminations.

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Fig. 6.  Forward I-V characteristics at room temperature.

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[1]
Millán J, Godignon P. Wide band-gap power semiconductor devices. Spanish Conference on Electron Devices (CDE), 2013: 293 http://ieeexplore.ieee.org/xpl/abstractKeywords.jsp?reload=true&tp=&arnumber=4389774&contentType=Journals+%26+Magazines&punumber%3D4123966
[2]
Jayant B B. Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, 8(9): 407 doi: 10.1109/EDL.1987.26676
[3]
Zhao J H, Alexandrov P, Li X. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes. IEEE Electron Device Lett, 2003, 24(6): 402 doi: 10.1109/LED.2003.813370
[4]
Imhoff E A, Hobart K D. High-current 10 kV SiC JBS rectifier performance. Mater Sci Forum, 2008, 600-603: 943 https://zh.scientific.net/MSF.600-603.943.pdf
[5]
Nguyen D M, Huang R, Phung L V, et al. Edge termination design improvements for 10 kV 4H-SiC bipolar diodes. Mater Sci Forum, 2013, 740-742: 609 doi: 10.4028/www.scientific.net/MSF.740-742
[6]
Niwa H, Feng G, Suda J, et al. Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures. 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012: 381 http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6229101
[7]
Huang Runhua, Tao Yonghong, Chen Gang. Simulation, fabrication and characterization of 6500 V 4H-SiC JBS diode. Adv Mater Research, 2014, 846/847: 737 http://www.scientific.net/amr.846-847.737.pdf
[8]
Tao Y H, Huang R H, Chen G, et al. 4.5 kV SiC JBS diodes. Appl Mechan Mater, 2013, 347-350: 1506 doi: 10.4028/www.scientific.net/AMM.347-350
[9]
Li Y, Zhao Z F, Li Z H. Epitaxial growth of SiC epilayers for 10 kV Schottky diodes using chloride-based CVD. Adv Mater Research, 2014, 887/888: 462 doi: 10.4028/www.scientific.net/AMR.887-888

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    Received: 17 December 2013 Revised: 18 February 2014 Online: Published: 01 July 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(7): 074005
      Runhua Huang, Yonghong Tao, Pengfei Cao, Ling Wang, Gang Chen, Song Bai, Rui Li, Yun Li, Zhifei Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005 ****R H Huang, Y H Tao, P F Cao, L Wang, G Chen, S Bai, R Li, Y Li, Z F Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. J. Semicond., 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005.
      Citation:
      Runhua Huang, Yonghong Tao, Pengfei Cao, Ling Wang, Gang Chen, Song Bai, Rui Li, Yun Li, Zhifei Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005 ****
      R H Huang, Y H Tao, P F Cao, L Wang, G Chen, S Bai, R Li, Y Li, Z F Zhao. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. J. Semicond., 2014, 35(7): 074005. doi: 10.1088/1674-4926/35/7/074005.
      shu

      Development of 10 kV 4H-SiC JBS diode with FGR termination

      DOI: 10.1088/1674-4926/35/7/074005
      • 1.

        Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, China

      • 2.

        Nanjing Electronic Devices Institute, Nanjing 210016, China

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      • Corresponding author: Huang Runhua, Email:huruhu@hotmail.com
      • Received Date: 2013-12-17
      • Revised Date: 2014-02-18
      • Published Date: 2014-07-01

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