Fig. 1.
Schematic diagram of the AlGaAs/InGaAs PHEMT
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| Citation: |
Lin Ma, Shiwei Feng, Yamin Zhang, Bing Deng, Yuan Yue. Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method[J]. Journal of Semiconductors, 2014, 35(9): 094006. doi: 10.1088/1674-4926/35/9/094006
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L Ma, S W Feng, Y M Zhang, B Deng, Y Yue. Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method[J]. J. Semicond., 2014, 35(9): 094006. doi: 10.1088/1674-4926/35/9/094006.
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Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method
DOI: 10.1088/1674-4926/35/9/094006
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Abstract
The effect of drain-source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage (VDS) is decreased. Moreover, the relatively low VDS and large drain-source current (IDS) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance. -
References
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