Fig. 1.
The measured C-V curves at room temperature for (a) samples 1, 2, 3, 4, (b) samples 5, 6, 7, 8 and (c) samples 9, 10, 11, 12
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| Citation: |
Chongbiao Luan, Zhaojun Lin, Yuanjie Lü, Zhihong Feng, Jingtao Zhao, Yang Zhou, Ming Yang. Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors[J]. Journal of Semiconductors, 2014, 35(9): 094007. doi: 10.1088/1674-4926/35/9/094007
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C B Luan, Z J Lin, Y Lü, Z H Feng, J T Zhao, Y Zhou, M Yang. Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors[J]. J. Semicond., 2014, 35(9): 094007. doi: 10.1088/1674-4926/35/9/094007.
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Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors
DOI: 10.1088/1674-4926/35/9/094007
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Abstract
Using the measured capacitance-voltage curves of Ni/Au Schottky contacts with different areas and the current-voltage characteristics for the AlGaAs/GaAs, AlGaN/AlN/GaN and In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, the two-dimensional electron gas (2DEG) electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the Ⅲ-Ⅴ nitride HFETs and the AlGaAs/GaAs HFETs. In the Ⅲ-Ⅴ nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drain-to-source distance. While the ratio of the gate length to the drain-to-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the AlGaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the Ⅲ-Ⅴ nitride HFETs. -
References
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