J. Semicond. > 2015, Volume 36 > Issue 1 > 013003
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SEMICONDUCTOR MATERIALS

Effect of defects on the electronic properties of WS2 armchair nanoribbon

Bahniman Ghosh1, 2 and Aayush Gupta2

+ Author Affiliations

 Corresponding author: Bahniman Ghosh, E-mail: bghosh@utexas.edu

DOI: 10.1088/1674-4926/36/1/013003

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Abstract: We have studied the WS2 armchair nanoribbon with various defects like vacancy, edge roughness, twist, turn and ripple and compared how the bandgap changes due to such defects with the bandgap of a nanoribbon with no defects. Materials like WS2 and other transition metal dichalcogenides (MX2) have a graphene like layered structure with hexagonal rings and have properties that have attracted a lot of interest. Hence it is essential to study the changes in the band structure of the nanoribbon of WS2 due to the inclusion of defects like vacancy, rough edge, wrap, ripple and twist for making any device based on WS2.

Key words: WS2 armchair nanoribbon, electronic property



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Fig. 1.  (Color online) Schematic of the WS$_2$ nanoribbon with (a) rough edge, (b) twist, (c) ripple, (d) wrap, and (e) vacancy defects.

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Fig. 2.  Band structure for the armchair nanoribbon of WS$_2$ with no defect.

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Fig. 3.  Band structure for the rippled armchair nanoribbon of WS$_2$. Rippling amplitude is 0.5 .

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Fig. 4.  Variation of bandgap with ripple amplitude for the armchair nanoribbon.

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Fig. 5.  Band structure for the twisted armchair nanoribbon of WS$_2$. Twist angle is 7$^\circ$.

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Fig. 6.  Variation of bandgap with twist angle for the armchair nanoribbon.

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Fig. 7.  Band structure for the wrapped armchair nanoribbon of WS$_2$. Wrap angle is 7$^\circ$.

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Fig. 8.  Variation of bandgap with wrap angle for the armchair nanoribbon.

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Fig. 9.  Band structure for the rough edged armchair nanoribbon of WS$_2$.

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Fig. 10.  Band structure for the vacancy defected (tungsten) armchair nanoribbon of WS$_2$.

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    Received: 26 June 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 013003
      Bahniman Ghosh, Aayush Gupta. Effect of defects on the electronic properties of WS2 armchair nanoribbon[J]. Journal of Semiconductors, 2015, 36(1): 013003. doi: 10.1088/1674-4926/36/1/013003 ****B Ghosh, A Gupta. Effect of defects on the electronic properties of WS2 armchair nanoribbon[J]. J. Semicond., 2015, 36(1): 013003. doi: 10.1088/1674-4926/36/1/013003.
      Citation:
      Bahniman Ghosh, Aayush Gupta. Effect of defects on the electronic properties of WS2 armchair nanoribbon[J]. Journal of Semiconductors, 2015, 36(1): 013003. doi: 10.1088/1674-4926/36/1/013003 ****
      B Ghosh, A Gupta. Effect of defects on the electronic properties of WS2 armchair nanoribbon[J]. J. Semicond., 2015, 36(1): 013003. doi: 10.1088/1674-4926/36/1/013003.
      shu

      Effect of defects on the electronic properties of WS2 armchair nanoribbon

      DOI: 10.1088/1674-4926/36/1/013003
      • 1.

        Microelectronics Research Center, 10100, Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX, 78758, USA

      • 2.

        Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India

      More Information
      • Corresponding author: E-mail: bghosh@utexas.edu
      • Received Date: 2014-06-26
      • Accepted Date: 2014-08-31
      • Published Date: 2015-01-25

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