Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

A. F. Bouhdjar; L. Ayat; AM. Meftah; N. Sengouga; AF. Meftah

doi:10.1088/1674-4926/36/1/014002

J. Semicond. > 2015, Volume 36 > Issue 1 > 014002

SEMICONDUCTOR DEVICES

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

A. F. Bouhdjar¹, L. Ayat², AM. Meftah^{1, 3}, N. Sengouga¹ and AF. Meftah¹

+ Author Affiliations

Corresponding author: AM. Meftah, E-mail: amjad_meftah@hotmail.com

DOI: 10.1088/1674-4926/36/1/014002

Abstract: Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p-i-n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength λ between 530-540 nm non uniformly absorbed, then the global standard solar spectrum (AM 1.5) illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier's densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell's external parameters: the open circuit voltage V_oc, the short circuit current density J_sc, the fill factor FF and the maximum power density P_max are also presented.

Key words: a-Si:H, Staebler-Wronski effect, p-i-n

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]

Fig. 1. Light-induced increase of the density of state in the gap of the a-Si:H.

DownLoad: Full-Size Img PowerPoint

Fig. 2. 3D variation of the defect state density.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Dangling bond concentration profiles.

DownLoad: Full-Size Img PowerPoint

Fig. 4. n and p density profiles, under short circuit condition.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Generation and recombination rate profiles.

DownLoad: Full-Size Img PowerPoint

Fig. 6. Trapped charge density profiles in band tails, $p_{\rm t}$, $n_{\rm t}$, and dangling bonds $D^+$, $D^0$, $D^-$.

DownLoad: Full-Size Img PowerPoint

Fig. 7. Gap structure, under short circuit condition in the (a) annealed state and (b) degraded state.

DownLoad: Full-Size Img PowerPoint

Fig. 8. Electric potential profile, under short circuit condition.

DownLoad: Full-Size Img PowerPoint

Fig. 9. Electric field profile, under short circuit condition.

DownLoad: Full-Size Img PowerPoint

Fig. 10. Space charge profile, under short circuit condition.

DownLoad: Full-Size Img PowerPoint

Fig. 11. Electron and hole current densities' profiles.

DownLoad: Full-Size Img PowerPoint

Fig. 12. (a) Drift- and Diffusion-electron current density profiles in annealed state, (b) drift- and diffusion-hole current density profiles in the annealed state, (c) drift- and diffusion-electron current density profiles in the degraded state, and (d) drift- and diffusion-hole current density profiles in the degraded state.

DownLoad: Full-Size Img PowerPoint

DownLoad: CSV

Table 1. Simulation parameters of the physical and numerical models.

DownLoad: CSV

Table 2. The cell photo-parameter degradation when $\mu_{\rm n}$/$\mu_{\rm p}$ $=$ 20/2 (cm$^{2}$/(V$\cdot $s)) and $\mu_{\rm n}$/$\mu_{\rm p}$ $=$ 25/6 (cm$^{2}$/(V$\cdot $s)).

DownLoad: CSV

Table 3. The solar cell output parameters under the full solar spectrum (AM 1.5) illumination in the annealed and degraded states.

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 2313 Times PDF downloads: 13 Times Cited by: 0 Times

History

Received: 15 July 2014 Revised: Online: Published: 01 January 2015

Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p-i-n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength λ between 530-540 nm non uniformly absorbed, then the global standard solar spectrum (AM 1.5) illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier's densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell's external parameters: the open circuit voltage V_oc, the short circuit current density J_sc, the fill factor FF and the maximum power density P_max are also presented.

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

DOI: 10.1088/1674-4926/36/1/014002

Abstract

References

Proportional views

Catalog

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Computer modelling and analysis of the photodegradation effect in a-Si:H p-i-n solar cell

DOI: 10.1088/1674-4926/36/1/014002

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content