J. Semicond. > 2015, Volume 36 > Issue 1 > 014003
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SEMICONDUCTOR DEVICES

Performance analysis of InSb based QWFET for ultra high speed applications

T. D. Subash1, T. Gnanasekaran2 and C. Divya3

+ Author Affiliations

 Corresponding author: T. D. Subash, E-mail: tdsubash2007@gmail.com

DOI: 10.1088/1674-4926/36/1/014003

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Abstract: An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5-10 times low DC power dissipation.

Key words: QWFET, InSb, gate length, cut-off frequency, short-channel effects



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Fig. 1.  Schematic cross sectional view of QWFET.

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Fig. 2.  $I_{\rm ds}$-$V_{\rm ds}$ characteristics.

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Fig. 3.  The effective carrier injection velocity versus DIBL.

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Fig. 4.  (a) Logic figures of merit for various In$_{0.7}$Ga$_{0.3}$As QWFET device architectures. (b) Gate length versus SS. (c) Gate length versus $V_{\rm t}$.

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Fig. 5.  The effective mobility as a function of gate bias for In$_{0.7}$Ga$_{0.3}$As QWFETs with 50 nm, 100 nm and 150 nm LG.

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Fig. 6.  Drain bias dependence of $f_{\rm T}$ and $f_{\rm max}$.

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Table 1.   Channel material properties at 295 K.

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    Received: 17 July 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 014003
      T. D. Subash, T. Gnanasekaran, C. Divya. Performance analysis of InSb based QWFET for ultra high speed applications[J]. Journal of Semiconductors, 2015, 36(1): 014003. doi: 10.1088/1674-4926/36/1/014003 ****T. D. Subash, T. Gnanasekaran, C. Divya. Performance analysis of InSb based QWFET for ultra high speed applications[J]. J. Semicond., 2015, 36(1): 014003. doi: 10.1088/1674-4926/36/1/014003.
      Citation:
      T. D. Subash, T. Gnanasekaran, C. Divya. Performance analysis of InSb based QWFET for ultra high speed applications[J]. Journal of Semiconductors, 2015, 36(1): 014003. doi: 10.1088/1674-4926/36/1/014003 ****
      T. D. Subash, T. Gnanasekaran, C. Divya. Performance analysis of InSb based QWFET for ultra high speed applications[J]. J. Semicond., 2015, 36(1): 014003. doi: 10.1088/1674-4926/36/1/014003.
      shu

      Performance analysis of InSb based QWFET for ultra high speed applications

      DOI: 10.1088/1674-4926/36/1/014003
      • 1.

        Department of ECE, Annai Vailankanni College of Engineering, Kanyakumari District, 629401, India

      • 2.

        Department of IT RMK, College of Engineering and Technology, 629401, India

      • 3.

        Centre for IT & Eng, Manonmaniam Sundaranar University, 627012, India

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      • Corresponding author: E-mail: tdsubash2007@gmail.com
      • Received Date: 2014-07-17
      • Accepted Date: 2014-08-13
      • Published Date: 2015-01-25

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