J. Semicond. > 2015, Volume 36 > Issue 1 > 014006
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SEMICONDUCTOR DEVICES

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

Leilei Li1, 2, , Xinjie Zhou2, Zongguang Yu1, 2 and Qing Feng2

+ Author Affiliations

 Corresponding author: Leilei Li, E-mail: lll225@aliyun.com

DOI: 10.1088/1674-4926/36/1/014006

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Abstract: The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO2 near back SiO2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices.

Key words: back gate phosphorus ions implantation, total-dose radiation, SOI MOS, back-gate effect



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Fig. 1.  Cross section of a partially depleted SOI NMOS transistor.

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Fig. 2.  Energy band diagram for a partially depleted SOI NMOS transistor.

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Fig. 3.  Energy band diagram for an SOI NMOS before irradiation.

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Fig. 4.  Energy band diagram for an SOI NMOS after irradiation, $V_{\rm g}$ $>$ 0.

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Fig. 5.  Energy band diagram for a hardened SOI NMOS before irradiation, $V_{\rm g}$ $>$ 0.

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Fig. 6.  Energy band diagram for a hardened SOI NMOS after irradiation, $V_{\rm g}$ $>$ 0.

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Fig. 7.  Vertical ion concentration distribution in SOI substrate without phosphorus implantation.

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Fig. 8.  Vertical ion concentration distribution in SOI substrate with implantation.

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Fig. 9.  Front-gate threshold voltage shift of SOI NMOS after total-dose irradiation.

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Fig. 10.  Back-gate threshold voltage shift of SOI NMOS after total-dose irradiation.

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Table 1.   Bias conditions definition (unit: V).

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    Received: 26 May 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 014006
      Leilei Li, Xinjie Zhou, Zongguang Yu, Qing Feng. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J]. Journal of Semiconductors, 2015, 36(1): 014006. doi: 10.1088/1674-4926/36/1/014006 ****L L Li, X J Zhou, Z G Yu, Q Feng. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J]. J. Semicond., 2015, 36(1): 014006. doi: 10.1088/1674-4926/36/1/014006.
      Citation:
      Leilei Li, Xinjie Zhou, Zongguang Yu, Qing Feng. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J]. Journal of Semiconductors, 2015, 36(1): 014006. doi: 10.1088/1674-4926/36/1/014006 ****
      L L Li, X J Zhou, Z G Yu, Q Feng. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J]. J. Semicond., 2015, 36(1): 014006. doi: 10.1088/1674-4926/36/1/014006.
      shu

      Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

      DOI: 10.1088/1674-4926/36/1/014006
      • 1.

        School of Microelectronics, Xidian University, Xi'an 710071, China

      • 2.

        The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China

      Funds:

      Project supported by the Major Fund for the National Science and Technology Program, China (No. 2009ZX02306-04) and the Fund of SOI Research and Development Center (No. 20106250XXX).

      More Information
      • Corresponding author: E-mail: lll225@aliyun.com
      • Received Date: 2014-05-26
      • Accepted Date: 2014-08-18
      • Published Date: 2015-01-25

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