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Perovskite plasmonic lasers capable of mode modulation
Jingbi You
Journal of Semiconductors, 2019, 40(7): 070203. doi: 10.1088/1674-4926/40/7/070203
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ZnO1-xTex and ZnO1-xSx semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis
Utsa Das, Partha P. Pal
Journal of Semiconductors, 2017, 38(8): 082001. doi: 10.1088/1674-4926/38/8/082001
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Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits
Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang, et al.
Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001
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Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014
Lara Valentic, Nima E. Gorji
Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012
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Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies
Aritra Acharyya, Aliva Mallik, Debopriya Banerjee, Suman Ganguli, Arindam Das, et al.
Journal of Semiconductors, 2014, 35(8): 084003. doi: 10.1088/1674-4926/35/8/084003
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A theoretical model of the femtosecond laser ablation of semiconductors considering inverse bremsstrahlung absorption
Lin Xiaohui, Zhang Chibin, Ren Weisong, Jiang Shuyun, Ouyang Quanhui, et al.
Journal of Semiconductors, 2012, 33(4): 046002. doi: 10.1088/1674-4926/33/4/046002
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30-GHz millimeter-wave carrier generation with single sideband modulation based on stimulated Brillouin scattering
Luo Zhen'ao, Xie Liang, Qi Xiaoqiong, Wang Hui
Journal of Semiconductors, 2011, 32(9): 092004. doi: 10.1088/1674-4926/32/9/092004
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Approximate Graphic Method for Solving Fermi Level and Majority Carrier Density of Semiconductors with Multiple Donors and Multiple Acceptors
Ken K. Chin
Journal of Semiconductors, 2011, 32(6): 062001. doi: 10.1088/1674-4926/32/6/062001
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Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching
Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun, Wang Wenjing, et al.
Journal of Semiconductors, 2011, 32(5): 056002. doi: 10.1088/1674-4926/32/5/056002
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A programmable gain amplifier with a DC offset calibration loop for a direct-conversion WLAN transceiver
Lei Qianqian, Lin Min, Chen Zhiming, Shi Yin
Journal of Semiconductors, 2011, 32(4): 045006. doi: 10.1088/1674-4926/32/4/045006
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11 |
Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate
Chen Wensuo, Zhang Bo, Li Zhaoji, Fang Jian, Guan Xu, et al.
Journal of Semiconductors, 2010, 31(6): 064004. doi: 10.1088/1674-4926/31/6/064004
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Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers
Jia Liang, Zhang Fan, Li Ming, Liu Yuliang, Chen Zhangyuan, et al.
Journal of Semiconductors, 2009, 30(5): 054007. doi: 10.1088/1674-4926/30/5/054007
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13 |
All-Optical Sampling Using Nonlinear Polarization Rotation in a Single Semiconductor Optical Amplifier
Zhang Shangjian, Zhang Qianshu, Li Heping, Liu Yongzhi, Liu Yong, et al.
Journal of Semiconductors, 2008, 29(6): 1031-1035.
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14 |
An Optoelectronic Pulse Frequency Modulation Circuitfor Retinal Prosthesis
Liu Jinbin, Chen Hongda, Gao Peng, Pei Weihua, Sui Xiaohong, et al.
Chinese Journal of Semiconductors , 2006, 27(4): 700-704.
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Optimal Design of Antireflection Coating for Flat and Wideband Incoherent Optical Sources Based on a Semiconductor Optical
Huang Lirong, Huang Dexiu, Zhang Xinliang
Chinese Journal of Semiconductors , 2006, 27(8): 1471-1475.
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16 |
Analysis of the Unbalanced State of an Interferometer Based on an SOA
Li Yajie, Wu Chongqing, Wang Yongjun, 李赟, Li Yun, et al.
Chinese Journal of Semiconductors , 2006, 27(10): 1851-1856.
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17 |
A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI
Zhang Jing, Li Baoxia, Zhao Lingjuan, Wang Baojun, Zhou Fan, et al.
Chinese Journal of Semiconductors , 2005, 26(11): 2053-2057.
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18 |
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror
Wang Yonggang, Ma Xiaoyu, Xue Yinghong, Sun Hong,Zhang Zhigang,and Wang Qingyue
Chinese Journal of Semiconductors , 2005, 26(2): 250-253.
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An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter
Chinese Journal of Semiconductors , 2005, 26(8): 1504-1508.
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20 |
Theory Analysis for Semiconductor Optical Amplifier with Large 3dB Bandwidth
ZHANG Rui-ying, DONG Jie, ZHANG Jing, FENG Zhi-wei, WANG Wei, et al.
Chinese Journal of Semiconductors , 2002, 23(9): 941-946.
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