J. Semicond. > 2015, Volume 36 > Issue 1 > 014012
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SEMICONDUCTOR DEVICES

A novel lateral cavity surface emitting laser with top sub-wavelength grating

Aiyi Qi1, 2, Yufei Wang2, Xiaojie Guo1, 2 and Wanhua Zheng1, 2,

+ Author Affiliations

 Corresponding author: Wanhua Zheng, E-mail: whzheng@semi.ac.cn

DOI: 10.1088/1674-4926/36/1/014012

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Abstract: We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 dB and a high output power of 5.32 mW at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.

Key words: photonic crystal, surface emitting laser, grating



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Fig. 1.  (a) Schematic picture of the SWG-LCSEL. (b) Cross section view of grating bars.

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Fig. 2.  The photonic band structure of SWG.

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Fig. 3.  The schematic structure of the calculation model.

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Fig. 4.  Longitudinal energy distribution cross section of the SWG-LCSEL. The grating heights are (a) 1.8 $\mu $m and (b) 0.5 $\mu $m, respectively.

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Fig. 5.  Energy distribution of the SWG-LCSEL at the position about 1.5$\lambda $ above the grating surface, shown by the dashed lines in Figure 4. The grating heights are (a) 1.8 $\mu $m and (b) 0.5 $\mu $m, respectively.

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Fig. 6.  The mode profile of the SWG-LCSEL.

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Fig. 7.  Top view of the SWG-LCSEL. The height, period and duty cycle of the grating are estimated to be about 1800 nm, 1070 nm and 0.341, respectively.

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Fig. 8.  The light-current-voltage curve of the SWG-LCSEL. The inset is the real lasing picture of the device.

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Fig. 9.  The surface-emitting spectrum of the SWG-LCSEL.

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Fig. 10.  (a) Image of a surface emitting laser without top SWG. (b) Surface-emitting spectrum of the device.

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    Received: 05 June 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 014012
      Aiyi Qi, Yufei Wang, Xiaojie Guo, Wanhua Zheng. A novel lateral cavity surface emitting laser with top sub-wavelength grating[J]. Journal of Semiconductors, 2015, 36(1): 014012. doi: 10.1088/1674-4926/36/1/014012 ****A Y Qi, Y F Wang, X J Guo, W H Zheng. A novel lateral cavity surface emitting laser with top sub-wavelength grating[J]. J. Semicond., 2015, 36(1): 014012. doi: 10.1088/1674-4926/36/1/014012.
      Citation:
      Aiyi Qi, Yufei Wang, Xiaojie Guo, Wanhua Zheng. A novel lateral cavity surface emitting laser with top sub-wavelength grating[J]. Journal of Semiconductors, 2015, 36(1): 014012. doi: 10.1088/1674-4926/36/1/014012 ****
      A Y Qi, Y F Wang, X J Guo, W H Zheng. A novel lateral cavity surface emitting laser with top sub-wavelength grating[J]. J. Semicond., 2015, 36(1): 014012. doi: 10.1088/1674-4926/36/1/014012.
      shu

      A novel lateral cavity surface emitting laser with top sub-wavelength grating

      DOI: 10.1088/1674-4926/36/1/014012
      • 1.

        State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the Chinese National Key Basic Research Special Fund/CNKBRSF (Nos. 2012CB933501, 2011CB922002), the National Natural Science Foundation of China (Nos. 61025025, 61137003, 61234004, 61021003), and the National High Technology Research and Development Program of China (No. 2012AA012202).

      More Information
      • Corresponding author: E-mail: whzheng@semi.ac.cn
      • Received Date: 2014-06-05
      • Published Date: 2015-01-25

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