J. Semicond. > 2015, Volume 36 > Issue 10 > 104003
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SEMICONDUCTOR DEVICES

An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

Huanqin Dang1, 2, Xiaoming Wu1, 2, Xiaowei Sun3, Runqiu Zou1, 2, Ruochuan Zhang1, 2 and Shougen Yin1, 2

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DOI: 10.1088/1674-4926/36/10/104003

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Abstract: We report an effective method to improve the performance of p-type copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) by employing a thin para-quaterphenyl (p-4p) film and simultaneously applying V2O5 to the source/drain regions.The p-4p layer was inserted between the insulating layer and the active layer, and V2O5 layer was added between CuPc and Al in the source-drain (S/D) area.As a result, the fieldeffect saturation mobility and on/off current ratio of the optimized device were improved to 5×10-2 cm2/(V·s) and 104, respectively.We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers.Moreover, by introducing the V2O5 electrode's modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced.

Key words: organic field-effect transistors, copper phthalocyanine active layer, para-quaterphenyl buffer layer, source/drain contact modifications



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Fig. 1.  The configurations of device A (Al/V$_{2}$O$_{5}$/CuPc/4p/SiO$_{2})$,device B (Al/CuPc/4p/SiO$_{2})$,device C (Al/V$_{2}$O$_{5}$/CuPc/SiO$_{2})$,device D (Al/CuPc/SiO$_{2})$,and the chemical structures of CuPc,p-4p,and V$_{2}$O$_{5}$.

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Fig. 2.  The output curves of the devices (a) device A,(b) device B,(c) device C,and (d) device D. Transfer characteristics of (e) devices A,B,C,and D at a fixed $V_{\rm DS}$ of $-50$ V.

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Fig. 3.  (a) 5 $\times $ 5 $\mu $m$^{2}$ AFM image of 4 nm p-4p/SiO$_{2}$/Si thin film; 2 $\times $ 2 $\mu $m$^{2}$ AFM images of (b) CuPc (40 nm)/SiO$_{2}$/Si,and (c) CuPc (40~nm)/p-4p/SiO$_{2}$/Si.

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Fig. 4.  Energy level schematics of Al,V$_{2}$O$_{5}$,and CuPc (units: -eV).

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Fig. 5.  Plots for the relationship between the channel length $L$ and the total resistant $R_{\rm T}$ with the 10 nm V$_{2}$O$_{5}$ layer modification; Inset: the total and contact resistances of the V$_{2}$O$_{5}$ modified devices with different thicknesses at a specific gate bias.

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    Received: 27 January 2015 Revised: Online: Published: 01 October 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(10): 104003
      Huanqin Dang, Xiaoming Wu, Xiaowei Sun, Runqiu Zou, Ruochuan Zhang, Shougen Yin. An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications[J]. Journal of Semiconductors, 2015, 36(10): 104003. doi: 10.1088/1674-4926/36/10/104003 ****H Q Dang, X M Wu, X W Sun, R Q Zou, R C Zhang, S G Yin. An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications[J]. J. Semicond., 2015, 36(10): 104003. doi: 10.1088/1674-4926/36/10/104003.
      Citation:
      Huanqin Dang, Xiaoming Wu, Xiaowei Sun, Runqiu Zou, Ruochuan Zhang, Shougen Yin. An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications[J]. Journal of Semiconductors, 2015, 36(10): 104003. doi: 10.1088/1674-4926/36/10/104003 ****
      H Q Dang, X M Wu, X W Sun, R Q Zou, R C Zhang, S G Yin. An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications[J]. J. Semicond., 2015, 36(10): 104003. doi: 10.1088/1674-4926/36/10/104003.
      shu

      An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

      DOI: 10.1088/1674-4926/36/10/104003
      • 1.

        Institute of Material Physics, Tianjin University of Technology, Tianjin 300384, China

      • 2.

        Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education of China, Tianjin University of Technology, Tianjin 300384, China

      • 3.

        School of Electrical Electronic Engineering, Nanyang Technological University, Singapore

      Funds:

      Project supported by the National Natural Science Foundation of China (No.60676051), the National High Technology Research and Development Program of China (No.2013A A014201), the Scientific Developing Foundation of Tianjin Education Commission (No.2011ZD02), the Key Science and Technology Support Program of Tianjin (No.14ZCZDGX00006), and the Foundation of Key Discipline of Material Physics and Chemistry of Tianjin.

      • Received Date: 2015-01-27
      • Accepted Date: 2015-05-11
      • Published Date: 2015-01-25

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