Citation: |
Hailong Jia, Xianmin Chen, Qi Liu, Guangtao Feng. A self-biased PLL with low power and compact area[J]. Journal of Semiconductors, 2015, 36(10): 105007. doi: 10.1088/1674-4926/36/10/105007
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H L Jia, X M Chen, Q Liu, G T Feng. A self-biased PLL with low power and compact area[J]. J. Semicond., 2015, 36(10): 105007. doi: 10.1088/1674-4926/36/10/105007.
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A self-biased PLL with low power and compact area
DOI: 10.1088/1674-4926/36/10/105007
More Information
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Abstract
A new low power, low phase jitter, compact realization, and self-biased PLL, which is fabricated on SMIC 40 nm CMOS technology is introduced.The proposed self-biased PLL eliminates extra band gap biasing circuits, and internally generates all the biasing voltages and currents.Meanwhile, all of the PLL dynamic loop parameters, such as loop bandwidth, natural frequency, damping factors are kept constant adaptively.By optimizing the circuit structures, the perfect unity of chip estate, power dissipation, phase jitter, and loop stability is achieved.The PLL consumes 4.2 mW of power under 1.1 V/2.5 V voltage supply at 2.4 GHz VCO frequency, while occupying a die area of less than 0.02 mm2 (180×110 μm2), and the typical period jitter (RMS) is around 2.8 ps.-
Keywords:
- self-biased PLL,
- ring VCO,
- low power,
- compact area
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References
[1] [2] [3] [4] [5] [6] -
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