Fig. 1.
TSV CMP process.
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| Citation: |
Jiao Hong, Yuling Liu, Baoguo Zhang, Xinhuan Niu, Liying Han. A novel kind of TSV slurry with guanidine hydrochloride[J]. Journal of Semiconductors, 2015, 36(10): 106003. doi: 10.1088/1674-4926/36/10/106003
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J Hong, Y L Liu, B G Zhang, X H Niu, L Y Han. A novel kind of TSV slurry with guanidine hydrochloride[J]. J. Semicond., 2015, 36(10): 106003. doi: 10.1088/1674-4926/36/10/106003.
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Abstract
The effect of a novel alkaline TSV (through-silicon-via) slurry with guanidine hydrochloride (GH) on CMP (chemical mechanical polishing) was investigated.The novel alkaline TSV slurry was free of any inhibitors.During the polishing process, the guanidine hydrochloride serves as an effective surface-complexing agent for TSV CMP applications, the removal rate of barrier (Ti) can be chemically controlled through tuned selectivity with respect to the removal rate of copper and dielectric, which is helpful to modifying the dishing and gaining an excellent topography performance in TSV manufacturing.In this paper, we mainly studied the working mechanism of the components of slurry and the skillful application guanidine hydrochloride in the TSV slurry.-
Keywords:
- TSV,
- alkaline slurry,
- guanidine hydrochloride,
- removal rate,
- selectivity
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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