J. Semicond. > 2015, Volume 36 > Issue 11 > 114007
|

SEMICONDUCTOR DEVICES

Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor

Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin and Xiang Li

+ Author Affiliations

 Corresponding author: Liu Liyan, Email: joyceliu123@126.com

DOI: 10.1088/1674-4926/36/11/114007

PDF

Abstract: A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to110 MeV·cm2/mg.

Key words: CMOS image sensor (APS), dark current, dark signal response non-uniformity, total dose effects, single event effects



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
Fig. 1.  The structure of a CMOS image sensor.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Structure of Cascode.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  A new type of radiation hardened differential amplifier.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Typical latch-up route and its equivalent circuit.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Structure of DICE.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  The curve of dark current in CMOS image sensor after radiation.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  The distribution graph of dark current in CMOS image sensor before and after radiation.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  Image under Ti ion exposure.

DownLoad: Full-Size Img PowerPoint
Fig. 9.  The average size of each spot resulting from three energetic particle strikes (LET(Ti) $=$ 22.1 MeV$\cdot$cm$^{2}$/mg,LET(Cl) $=$ 13.79MeV$\cdot$cm$^{2}$/mg,LET(S) $=$ 12 MeV$\cdot $cm$^{2}$/mg).

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3017 Times PDF downloads: 39 Times Cited by: 0 Times

    History

    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(11): 114007
      Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin, Xiang Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. Journal of Semiconductors, 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007 ****Y F Zhao, L Y Liu, X H Liu, X F Jin, X Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. J. Semicond., 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007.
      Citation:
      Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin, Xiang Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. Journal of Semiconductors, 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007 ****
      Y F Zhao, L Y Liu, X H Liu, X F Jin, X Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. J. Semicond., 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007.
      shu

      Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor

      DOI: 10.1088/1674-4926/36/11/114007

      • Beijing Microelectronics Technology Institute, Beijing 100076, China

      More Information
      • Corresponding author: Liu Liyan, Email: joyceliu123@126.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return