J. Semicond. > 2015, Volume 36 > Issue 2 > 024013
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SEMICONDUCTOR DEVICES

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang and Chunjuan Liu

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 Corresponding author: Zaixing Wang, E-mail: zaixw@mail.lzjtu.cn

DOI: 10.1088/1674-4926/36/2/024013

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Abstract: In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6—11.4 μm and (2.2—2.4) × 1015 cm-3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 ℃, that is 50 ℃ higher than that of the traditional one; the reverse voltage capacity VR can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μ A and the forward conduction voltage drop is VF = 0.71 V at forward current IF = 3 A.

Key words: Schottky potential barrier diode, breakdown voltage, I—V characteristics, NiPt60 sputtering, junction temperature



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Fig. 1.  Cross-section of designed Schottky diode structure.

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Fig. 2.  Forward $I$-$V$ characteristic of Schottky diode measured at 175 C (500 mA/div on linear vertical axis; 100 mV/div on linear horizontal axis).

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Fig. 3.  Reverse $I$-$V$ characteristics of Schottky diode measured at 175 C (20 $\mu $A/div on linear vertical axis; 20 V/div on linear horizontal axis).

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Fig. 4.  Forward $I$-$V$ characteristics of NiSi/Si Schottky diode simulated at 125 C (dotted line) and of Ni(Pt)Si/Si Schottky diode simulated at 175 C (solid line).

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Fig. 5.  Reverse $I$-$V$ characteristics of NiSi/Si Schottky diode simulated at 125 C (dotted line) and of Ni(Pt)Si/Si Schottky diode simulated at 175 C (solid line).

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    Received: 05 July 2014 Revised: Online: Published: 01 February 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(2): 024013
      Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang, Chunjuan Liu. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode[J]. Journal of Semiconductors, 2015, 36(2): 024013. doi: 10.1088/1674-4926/36/2/024013 ****Y S Wang, L Rui, A Ghaffar, Z X Wang, C J Liu. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode[J]. J. Semicond., 2015, 36(2): 024013. doi: 10.1088/1674-4926/36/2/024013.
      Citation:
      Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang, Chunjuan Liu. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode[J]. Journal of Semiconductors, 2015, 36(2): 024013. doi: 10.1088/1674-4926/36/2/024013 ****
      Y S Wang, L Rui, A Ghaffar, Z X Wang, C J Liu. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode[J]. J. Semicond., 2015, 36(2): 024013. doi: 10.1088/1674-4926/36/2/024013.
      shu

      Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

      DOI: 10.1088/1674-4926/36/2/024013

      • School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61366006), the Research Projects of Higher Education, Gansu's Ministry of Education (No. 213019), and the Fundamental Research Funds for Gansu Provincial Finance Department (No. 213048).

      More Information
      • Corresponding author: E-mail: zaixw@mail.lzjtu.cn
      • Received Date: 2014-07-05
      • Accepted Date: 2014-10-22
      • Published Date: 2015-01-25

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