J. Semicond. > 2015, Volume 36 > Issue 2 > 024012
|

SEMICONDUCTOR DEVICES

A novel hybrid III—V/silicon deformed micro-disk single-mode laser

Peng Feng1, 2, Yejin Zhang1, 2, Yufei Wang2, Lei Liu1, 2, Siriguleng Zhang1, 2, Hailing Wang1, 2 and Wanhua Zheng1, 2,

+ Author Affiliations

 Corresponding author: Wanhua Zheng, E-mail: whzheng@semi.ac.cn

DOI: 10.1088/1674-4926/36/2/024012

PDF

Abstract: A novel hybrid III—V/silicon deformed micro-disk single-mode laser connecting to a Si output waveguide is designed, and fabricated through BCB bonding technology and standard i-line photolithography. Compared to a traditional circular micro-disk in multi-longitudinal-mode operation, unidirectional emission and single longitudinal-mode output from a Si waveguide are realized. In the experiments, an output power of 0.31 mW and a side-mode suppression ratio of 27 dB in the continuous-wave regime are obtained.

Key words: hybrid laser, deformed micro-disk, single longitudinal mode



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
Fig. 1.  (a) Three-dimensional schematic structure, (b) top-view topographical structure of the deformed micro-disk III-V/SOI hybrid laser, and (c) detailed cross-sectional view of the straight cavity of the hybrid laser.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (a) Intensity spectra for TE modes obtained by simulation for the deformed micro-disk ($D =$ 20 $\mu $m) with a 2-$\mu $m-wide output waveguide and (b) the circular micro-disk ($D =$ 20 $\mu $m) with the same output waveguide.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (a) SEM of the cross-section of III-V material bonded on a Si strip waveguide, (b) infrared micrographs taken from an end facet of the devices, and (c) the electrode pads distribution.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Light output power and voltage versus continuous injection current.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  The spectrum at 60 mA injection current under cooling conditions.

DownLoad: Full-Size Img PowerPoint
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2549 Times PDF downloads: 19 Times Cited by: 0 Times

    History

    Received: 04 July 2014 Revised: Online: Published: 01 February 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(2): 024012
      Peng Feng, Yejin Zhang, Yufei Wang, Lei Liu, Siriguleng Zhang, Hailing Wang, Wanhua Zheng. A novel hybrid III—V/silicon deformed micro-disk single-mode laser[J]. Journal of Semiconductors, 2015, 36(2): 024012. doi: 10.1088/1674-4926/36/2/024012 ****P Feng, Y J Zhang, Y F Wang, L Liu, S R G L Zhang, H L Wang, W H Zheng. A novel hybrid III—V/silicon deformed micro-disk single-mode laser[J]. J. Semicond., 2015, 36(2): 024012. doi: 10.1088/1674-4926/36/2/024012.
      Citation:
      Peng Feng, Yejin Zhang, Yufei Wang, Lei Liu, Siriguleng Zhang, Hailing Wang, Wanhua Zheng. A novel hybrid III—V/silicon deformed micro-disk single-mode laser[J]. Journal of Semiconductors, 2015, 36(2): 024012. doi: 10.1088/1674-4926/36/2/024012 ****
      P Feng, Y J Zhang, Y F Wang, L Liu, S R G L Zhang, H L Wang, W H Zheng. A novel hybrid III—V/silicon deformed micro-disk single-mode laser[J]. J. Semicond., 2015, 36(2): 024012. doi: 10.1088/1674-4926/36/2/024012.
      shu

      A novel hybrid III—V/silicon deformed micro-disk single-mode laser

      DOI: 10.1088/1674-4926/36/2/024012
      • 1.

        State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the Chinese National Key Basic Research Special Fund (No. 2012CB933501), the National Natural Science Foundation of China (Nos. 61025025, 61274070, 61234004, 61307033), and the National High Technology Research and Development Program of China (No. 2012AA012202).

      More Information
      • Corresponding author: E-mail: whzheng@semi.ac.cn
      • Received Date: 2014-07-04
      • Accepted Date: 2014-08-20
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return