J. Semicond. > 2015, Volume 36 > Issue 2 > 024011
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SEMICONDUCTOR DEVICES

Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

Zhiyuan Zuo1, 2, , Wei Xia2, 3, Gang Wang1 and Xiangang Xu2, 3

+ Author Affiliations

 Corresponding author: Zhiyuan Zuo, E-mail: zuozhiyuan@inspur.com

DOI: 10.1088/1674-4926/36/2/024011

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Abstract: We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes (LEDs) to improve the light extraction efficiency by using a photo-assisted chemical etched GaP:Mg layer. The pyramid patterns were fabricated employing a HF and H2O2 mixed solution in combination with a 532 nm laser on a GaP:Mg surface firstly, and then a gold reflector layer was evaporated onto the patterned GaP:Mg surface. After the whole chip process, the patterned gold reflector structure was confirmed to be efficient for light extraction and a 18.55% enhancement of the electroluminescent flux has been obtained by an integrating sphere, compared to the surface textured LEDs with flat reflectors.

Key words: pyramidally patterned reflector, light emitting diodes, wafer-bonding, light extraction efficiency



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Fig. 1.  Structures of wafer-bonding AlGaInP LED wafer.

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Fig. 2.  SEM and optical microscope images of the patterned GaP and reflector. (a) SEM image of the patterned GaP surface, (b) shows the cross section. (c) Top view and (d) cross section SEM images of the pattered gold reflector on the GaP surface. The optical microscope images of (e) the flat reflector and (f) the patterned reflector.

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Fig. 3.  $I$-$V$ curves of flat reflector and patterned reflector samples.

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Fig. 4.  Optical and electrical properties of flat reflector and patterned reflector samples obtained on wafer test before encapsulation. (a) The light intensity. (b) The voltage under 20 mA injection. (c) The dominant and (d) peak wavelengths.

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Fig. 5.  Optical properties of flat reflector and patterned reflector samples obtained after encapsulation. (a) Luminous flux. (b) Output light power. (c) Luminous efficiency. (d) Peak wavelength.

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    Received: 04 August 2014 Revised: Online: Published: 01 February 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(2): 024011
      Zhiyuan Zuo, Wei Xia, Gang Wang, Xiangang Xu. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J]. Journal of Semiconductors, 2015, 36(2): 024011. doi: 10.1088/1674-4926/36/2/024011 ****Z Y Zuo, W Xia, G Wang, X G Xu. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J]. J. Semicond., 2015, 36(2): 024011. doi: 10.1088/1674-4926/36/2/024011.
      Citation:
      Zhiyuan Zuo, Wei Xia, Gang Wang, Xiangang Xu. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J]. Journal of Semiconductors, 2015, 36(2): 024011. doi: 10.1088/1674-4926/36/2/024011 ****
      Z Y Zuo, W Xia, G Wang, X G Xu. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J]. J. Semicond., 2015, 36(2): 024011. doi: 10.1088/1674-4926/36/2/024011.
      shu

      Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

      DOI: 10.1088/1674-4926/36/2/024011
      • 1.

        School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

      • 2.

        INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co., Ltd, Ji'nan 250100, China

      • 3.

        State Key Laboratory of Crystal Material, Shandong University, Ji'nan 250100, China

      Funds:

      Project supported by the Post Doctoral Innovation Fund of Shandong Province (No. 201303002), the Shandong Province Young and Middle- Aged Scientists Research Awards Fund (No. BS2013DX007), and the the National Basic Research Program of China (No. 6131550102).

      More Information
      • Corresponding author: E-mail: zuozhiyuan@inspur.com
      • Received Date: 2014-08-04
      • Accepted Date: 2014-09-13
      • Published Date: 2015-01-25

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