Citation: |
Qing Xu, Xiaorong Luo, Kun Zhou, Ruichao Tian, Jie Wei, Yuanhang Fan, Bo Zhang. Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect[J]. Journal of Semiconductors, 2015, 36(2): 024010. doi: 10.1088/1674-4926/36/2/024010
****
Q Xu, X R Luo, K Zhou, R C Tian, J Wei, Y H Fan, B Zhang. Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect[J]. J. Semicond., 2015, 36(2): 024010. doi: 10.1088/1674-4926/36/2/024010.
|
Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect
DOI: 10.1088/1674-4926/36/2/024010
More Information
-
Abstract
A RESURF-enhanced high voltage SOI LDMOS (ER-LDMOS) with an ultralow specific on-resistance (Ron,sp) is proposed. The device features an oxide trench in the drift region, a P-pillar at the sidewall of the trench, and a buried P-layer (BPL) under the trench. First, the P-pillar adjacent to the P-body not only acts as a vertical junction termination extension (JTE), but also forms a vertical reduced surface field (RESURF) structure with the N-drift region. Both of them optimize the bulk electric field distributions and increase the doping concentration of the drift region. Second, the BPL together with the N-drift region and the buried oxide layer (BOX) exhibits a triple-RESURF effect, which further improves the bulk field distributions and the doping concentration. Additionally, multiple-directional depletion is induced owing to the P-pillar, the BPL, and two MIS-like structures consisting of the N-drift region combined with the oxide trench and the BOX. As a result, a significantly enhanced-RESURF effect is achieved, leading to a high breakdown voltage (BV) and a low Ron,sp. Moreover, the oxide trench folds the drift region in the vertical direction, resulting in a reduced cell pitch and thus Ron,sp. Simulated results show that the ER-LDMOS improves BV by 67% and reduces Ron,sp by 91% compared with the conventional trench LDMOS at the same cell pitch. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
Proportional views