Citation: |
Yuan Su, Jixuan Xiang, Xiaoying Shen, Fan Ye, Junyan Ren. Design of a 1.12 Gb/s 11.3 mW low-voltage differential signaling transmitter[J]. Journal of Semiconductors, 2015, 36(4): 045004. doi: 10.1088/1674-4926/36/4/045004
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Y Su, J X Xiang, X Y Shen, F Ye, J Y Ren. Design of a 1.12 Gb/s 11.3 mW low-voltage differential signaling transmitter[J]. J. Semicond., 2015, 36(4): 045004. doi: 10.1088/1674-4926/36/4/045004.
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Design of a 1.12 Gb/s 11.3 mW low-voltage differential signaling transmitter
DOI: 10.1088/1674-4926/36/4/045004
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Abstract
This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18 μm mixed signal complementary metal-oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling (LVDS) technique. A multiplexer (MUX) and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 : 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560 μm2, demonstrating low power consumption and adjustable driving capability. -
References
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