J. Semicond. > 2015, Volume 36 > Issue 5 > 053003
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SEMICONDUCTOR MATERIALS

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

Qingsong Wang1, 2, Masao Ikeda1, Ming Tan1, Pan Dai1, 3, Yuanyuan Wu1, Shulong Lu1, and Hui Yang1

+ Author Affiliations

 Corresponding author: Shulong Lu, E-mail: sllu2008@sinano.ac.cn

DOI: 10.1088/1674-4926/36/5/053003

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Abstract: We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32 × 10-4 Ω ·cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model (c-TLM) method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81 × 10-6 Ω ·cm2, while that of ITO/n-GaAs is 7 × 10-5 Ω ·cm2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

Key words: ITO, electron beam evaporation, ITO/n-GaAs, specific contact resistance



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Fig. 1.  Graph of (a) resistivity, (b) carrier concentration and Hall mobility versus annealing (in N$_{2}$ atmosphere) temperature for ITO films grown by electron beam evaporation.

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Fig. 2.  Graph of measured transmittance versus wavelength for ITO film grown by electron beam evaporation. Film thickness was approximately 100 nm.

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Fig. 3.  Circular test patterns for ohmic contact characteristic, the outer radius $R =$ 110 nm, and the inner radius $r =$ 105, 100, 95, 90, 85, 80 $\mu $m, and the schematic of $I$-$V$ measurement by using high precision probes.

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Fig. 4.  (Color online) Current-voltage characteristics of ITO/Ni structure annealing at 400-700 C.

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Fig. 5.  The terminal resistance regarded as a function of ln($R/r$) to measure the contact resistivity $\rho_{\rm c}$.

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Fig. 6.  ITO/Ni contact resistivity at various annealing (in N$_{2}$ atmosphere) temperatures.

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Fig. 7.  The structure and the schematic of the touch between probes and Ni/ITO/n-GaAs.

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Fig. 8.  (Color online) (a) Current-voltage characteristics of Ni/ITO/n-GaAs structure. (b) The contact resistivity between ITO and GaAs as a function of the annealing (in N$_{2}$ atmosphere) temperature.

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    Received: 22 October 2014 Revised: Online: Published: 01 May 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 053003
      Qingsong Wang, Masao Ikeda, Ming Tan, Pan Dai, Yuanyuan Wu, Shulong Lu, Hui Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. Journal of Semiconductors, 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003 ****Q S Wang, M Ikeda, M Tan, P Dai, Y Y Wu, S L Lu, H Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. J. Semicond., 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003.
      Citation:
      Qingsong Wang, Masao Ikeda, Ming Tan, Pan Dai, Yuanyuan Wu, Shulong Lu, Hui Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. Journal of Semiconductors, 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003 ****
      Q S Wang, M Ikeda, M Tan, P Dai, Y Y Wu, S L Lu, H Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. J. Semicond., 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003.
      shu

      High quality non-rectifying contact of ITO with both Ni and n-type GaAs

      DOI: 10.1088/1674-4926/36/5/053003
      • 1.

        Key Laboratory Nano-Devices and Application, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

      • 2.

        Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

      • 3.

        University of Chinese Academy of Sciences, Beijing 100049, China

      Funds:

      Project supported by the National Natural Science Foundation (Nos.61176128, 61376081), the Knowledge Innovation Project of the CAS (No.Y2BAQ11001), and the SINANO SONY Joint Program (Nos.Y1AAQ11002, Y2AAQ11004).

      More Information
      • Corresponding author: E-mail: sllu2008@sinano.ac.cn
      • Received Date: 2014-10-22
      • Accepted Date: 2014-12-03
      • Published Date: 2015-01-25

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