J. Semicond. > 2015, Volume 36 > Issue 5 > 054001
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SEMICONDUCTOR DEVICES

Deposition and doping of CdS/CdTe thin film solar cells

Nima E. Gorji

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 Corresponding author: Nima E. Gorji, E-mail: nima.eshaghigorji2@unibo.it

DOI: 10.1088/1674-4926/36/5/054001

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Abstract: 1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O2-free devices are compared after CdCl2 treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.

Key words: CdTe thin film, oxygen incorporation, SEM, X-ray diffraction



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Fig. 1.  The current-voltage characteristics of O$_2$-free and 1% oxygenated CdS/CdTe thin film devices. The electrical parameters are given in Table 1.

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Fig. 2.  The SEM images of oxygenated and O$_2$-free films after activation by CdCl$_2$ and annealing in air or Ar ambient. The effect of activation process on the grain sizes is clear. The images were taken at 100 nm.

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Fig. 3.  The XRD patterns of the O$_2$-free and 1% O$_2$ incorporated CdS/CdTe thin films: as-deposited and treated films in air and Ar ambient. All the films show zincblende phase with (1 1 1) plane with less oriented structure for the oxygenated films.

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Fig. 4.  Color online) The transmission spectra of O$_2$-free and 1% O$_2$ CdS/CdTe films: as-deposited, annealed in air and Ar ambient. All samples show very good absorption by around 820 nm. As-deposited sample has a red-shift to lower wavelengths. The treatment reduced the band gap of the device. Oxygenation increases the band gap.

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Table 1.   The best paramters of the fabricated CdS/CdTe thin film solar cells.

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    Received: 02 November 2014 Revised: Online: Published: 01 May 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054001
      Nima E. Gorji. Deposition and doping of CdS/CdTe thin film solar cells[J]. Journal of Semiconductors, 2015, 36(5): 054001. doi: 10.1088/1674-4926/36/5/054001 ****N. E. Gorji. Deposition and doping of CdS/CdTe thin film solar cells[J]. J. Semicond., 2015, 36(5): 054001. doi:  10.1088/1674-4926/36/5/054001.
      Citation:
      Nima E. Gorji. Deposition and doping of CdS/CdTe thin film solar cells[J]. Journal of Semiconductors, 2015, 36(5): 054001. doi: 10.1088/1674-4926/36/5/054001 ****
      N. E. Gorji. Deposition and doping of CdS/CdTe thin film solar cells[J]. J. Semicond., 2015, 36(5): 054001. doi:  10.1088/1674-4926/36/5/054001.
      shu

      Deposition and doping of CdS/CdTe thin film solar cells

      DOI: 10.1088/1674-4926/36/5/054001

      • Department of Electrical, Electronics and Information Engineering, University of Bologna, Bologna 40136, Italy

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      • Corresponding author: E-mail: nima.eshaghigorji2@unibo.it
      • Received Date: 2014-11-02
      • Published Date: 2015-01-25

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