Citation: |
Xin Wan, Weisong Zhou, Daoguang Liu, Hanliang Bo, Jun Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. Journal of Semiconductors, 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003
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X Wan, W S Zhou, D G Liu, H L Bo, J Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. J. Semicond., 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003.
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Charge deposition model for investigating SE-microdose effect in trench power MOSFETs
DOI: 10.1088/1674-4926/36/5/054003
More Information
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Abstract
It was demonstrated that heavy ions can induce large current-voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model. -
References
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