J. Semicond. > 2015, Volume 36 > Issue 5 > 054003
|

SEMICONDUCTOR DEVICES

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

Xin Wan1, Weisong Zhou1, , Daoguang Liu1, Hanliang Bo1 and Jun Xu2

+ Author Affiliations

 Corresponding author: Weisong Zhou, E-mail: zhouws@tsinghua.edu.cn

DOI: 10.1088/1674-4926/36/5/054003

PDF

Abstract: It was demonstrated that heavy ions can induce large current-voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

Key words: trench power MOSFETs, SE-microdose effect, charge deposition model



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  Schematic of a heavy ion passing through a trench power MOSFET.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Four Stages of a heavy-ion introduce charge in SiO$_{2}$/Si interface. (a) Charge generation. (b) Charge recombination. (c) Holes transport. (d) holes capture.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Katz model results of charge density profile produced by heavy ions.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Hole distribution after electron hole recombination.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Holes distribution (a) before and (b) after holes transport stage.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Cross-section of the simulated device.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Subthreshold characteristics before and after single Xe hit.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  Plot of subthreshold voltage shifts versus hitting position and electric field.

DownLoad: Full-Size Img PowerPoint
Fig. 9.  Plot of subthreshold voltage shifts in various thickness oxide.

DownLoad: Full-Size Img PowerPoint
Fig. 10.  Plot of subthreshold voltage shifts induced by different ions.

DownLoad: Full-Size Img PowerPoint

Table 1.   LET value of ions.

DownLoad: CSV
DownLoad: CSV

Table 2.   Charge yield in different electric fields.

DownLoad: CSV

Table 3.   Kuboyama's experiment conditions.

DownLoad: CSV
DownLoad: CSV
DownLoad: CSV

Table 4.   Comparison of trapped charge at interface by different heavy ions.

DownLoad: CSV
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2408 Times PDF downloads: 22 Times Cited by: 0 Times

    History

    Received: 29 August 2014 Revised: Online: Published: 01 May 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054003
      Xin Wan, Weisong Zhou, Daoguang Liu, Hanliang Bo, Jun Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. Journal of Semiconductors, 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003 ****X Wan, W S Zhou, D G Liu, H L Bo, J Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. J. Semicond., 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003.
      Citation:
      Xin Wan, Weisong Zhou, Daoguang Liu, Hanliang Bo, Jun Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. Journal of Semiconductors, 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003 ****
      X Wan, W S Zhou, D G Liu, H L Bo, J Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. J. Semicond., 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003.
      shu

      Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

      DOI: 10.1088/1674-4926/36/5/054003
      • 1.

        Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084, China

      • 2.

        Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      More Information
      • Corresponding author: E-mail: zhouws@tsinghua.edu.cn
      • Received Date: 2014-08-29
      • Accepted Date: 2014-12-16
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return