Citation: |
Jiahui Zhou, Hudong Chang, Honggang Liu, Guiming Liu, Wenjun Xu, Qi Li, Simin Li, Zhiyi He, Haiou Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. Journal of Semiconductors, 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004
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J H Zhou, H D Chang, H G Liu, G M Liu, W J Xu, Q Li, S M Li, Z Y He, H O Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. J. Semicond., 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004.
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MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application
DOI: 10.1088/1674-4926/36/5/054004
More Information
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Abstract
The impact of various thicknesses of Al2O3 metal-insulator-metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-α of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.-
Keywords:
- MIM capacitors,
- Al2O3,
- thickness
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] -
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