J. Semicond. > 2015, Volume 36 > Issue 5 > 054005
|

SEMICONDUCTOR DEVICES

Thin silicon layer SOI power device with linearly-distance fixed charge islands

Yuan Zuo1, Haiou Li1, Jianghui Zhai1, Ning Tang1, Shuxiang Song3 and Qi Li1, 2,

+ Author Affiliations

 Corresponding author: Qi Li, E-mail: lqmoon@guet.edu.cn

DOI: 10.1088/1674-4926/36/5/054005

PDF

Abstract: A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed (LFI LDMOS). A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with Ld = 45 μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on-resistance.

Key words: linearly-distanced, fixed charge island, breakdown voltage, dynamic holes, on-resistance



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
Fig. 1.  (a) Cross-section of LFI LDMOS. (b) Processes of fixed charge islands.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Equipotential distribution of LFI LDMOS. (b) Equipotential distribution of conventional LDMOS. (c) Dynamic electrons distribution on the bottom interface of the buried oxide. (d) Dynamic holes distribution on the top interface of the buried oxide. (e) Surface electric field distribution. (f) Vertical electric field distribution under the drain.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (a) Breakdown voltage and on-resistance as a function of $N_{\rm d}$. (b) The BV as a function of on-resistance.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Influence of $\Delta D$ on (a) BV and (b) optimal $N_{\rm d}$.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Breakdown voltage as a function of (a) $N_{\rm d}$ and $N_{\rm p}$, (b) $N_{\rm d}$ and $D$, (c) $\sigma_{\rm f}$ and BV, and (d) $N_{\rm d}$ and $t_{\rm d}$.

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2993 Times PDF downloads: 19 Times Cited by: 0 Times

    History

    Received: 11 October 2014 Revised: Online: Published: 01 May 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054005
      Yuan Zuo, Haiou Li, Jianghui Zhai, Ning Tang, Shuxiang Song, Qi Li. Thin silicon layer SOI power device with linearly-distance fixed charge islands[J]. Journal of Semiconductors, 2015, 36(5): 054005. doi: 10.1088/1674-4926/36/5/054005 ****Y Zuo, H O Li, J H Zhai, N Tang, S X Song, Q Li. Thin silicon layer SOI power device with linearly-distance fixed charge islands[J]. J. Semicond., 2015, 36(5): 054005. doi: 10.1088/1674-4926/36/5/054005.
      Citation:
      Yuan Zuo, Haiou Li, Jianghui Zhai, Ning Tang, Shuxiang Song, Qi Li. Thin silicon layer SOI power device with linearly-distance fixed charge islands[J]. Journal of Semiconductors, 2015, 36(5): 054005. doi: 10.1088/1674-4926/36/5/054005 ****
      Y Zuo, H O Li, J H Zhai, N Tang, S X Song, Q Li. Thin silicon layer SOI power device with linearly-distance fixed charge islands[J]. J. Semicond., 2015, 36(5): 054005. doi: 10.1088/1674-4926/36/5/054005.
      shu

      Thin silicon layer SOI power device with linearly-distance fixed charge islands

      DOI: 10.1088/1674-4926/36/5/054005
      • 1.

        Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

      • 2.

        State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • 3.

        College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China

      Funds:

      Project supported by the Guangxi Natural Science Foundation of China (No.2013GXNSFAA019335), the Guangxi Department of Education Project (No.201202ZD041), the China Postdoctoral Science Foundation Project (Nos.2012M521127, 2013T60566), and the National Natural Science Foundation of China (Nos.61361011, 61274077, 61464003).

      More Information
      • Corresponding author: E-mail: lqmoon@guet.edu.cn
      • Received Date: 2014-10-11
      • Accepted Date: 2014-12-15
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return