J. Semicond. > 2015, Volume 36 > Issue 5 > 054006
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SEMICONDUCTOR DEVICES

Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

Yan Lei1, 2, Zhiqiang Liu2, , Miao He1, , Xiaoyan Yi2, Junxi Wang2, Jinmin Li2, Shuwen Zheng1 and Shuti Li3

+ Author Affiliations

 Corresponding author: Zhiqiang Liu, E-mail: lzq@semi.ac.cn; Miao He, E-mail: herofate@126.com

DOI: 10.1088/1674-4926/36/5/054006

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Abstract: The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the light output power are investigated by APSYS software. The simulation results show that the LED with AlGaN composition-graded barriers has a better performance than its AlGaN/InGaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the output power is enhanced significantly and the efficiency droop is markedly improved when the AlGaN barriers are replaced by AlGaN composition-graded barriers.

Key words: light-emitting diodes, composition-graded barriers, efficiency droop



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Fig. 1.  (a) Output power and (b) IQE performance curves as a function of injection current for the Al$_{0.05}$Ga$_{0.95}$N barriers and grading AlGaN barriers structures.

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Fig. 2.  (Color online) Electrostatic fields of the active region and EBL for the Al$_{0.05}$Ga$_{0.95}$N barriers and grading AlGaN barriers structures.

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Fig. 3.  (Color online) Calculated band diagrams of the Al$_{0.05}$Ga$_{0.95}$N barriers and grading AlGaN barriers structures at 150 mA.

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Fig. 4.  (Color online) (a) Electron and (b) hole concentrations for the Al$_{0.05}$Ga$_{0.95}$N barriers and grading AlGaN barriers structures at 150 mA.

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    Received: 05 January 2015 Revised: Online: Published: 01 May 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054006
      Yan Lei, Zhiqiang Liu, Miao He, Xiaoyan Yi, Junxi Wang, Jinmin Li, Shuwen Zheng, Shuti Li. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J]. Journal of Semiconductors, 2015, 36(5): 054006. doi: 10.1088/1674-4926/36/5/054006 ****Y Lei, Z Q Liu, M He, X Y Yi, J X Wang, J M Li, S W Zheng, S T Li. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J]. J. Semicond., 2015, 36(5): 054006. doi: 10.1088/1674-4926/36/5/054006.
      Citation:
      Yan Lei, Zhiqiang Liu, Miao He, Xiaoyan Yi, Junxi Wang, Jinmin Li, Shuwen Zheng, Shuti Li. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J]. Journal of Semiconductors, 2015, 36(5): 054006. doi: 10.1088/1674-4926/36/5/054006 ****
      Y Lei, Z Q Liu, M He, X Y Yi, J X Wang, J M Li, S W Zheng, S T Li. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J]. J. Semicond., 2015, 36(5): 054006. doi: 10.1088/1674-4926/36/5/054006.
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      Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

      DOI: 10.1088/1674-4926/36/5/054006
      • 1.

        Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China

      • 2.

        Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 3.

        Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China

      Funds:

      Project supported by the National High Technology Program of China (Nos.2011AA03A105, 2013AA03A101), the National Natural Science Foundation of China (Nos.61306051, 61306050, 11474105), the Beijing Municipal Science and Technology Project (No.D12110300140000), the National Basic Research Program of China (No.2011CB301902), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (No.2012B091000169), the Science & Technology Innovation Platform of Industry-Academia- Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (No.2012B090600038), the Specialized Research Fund for the Doctoral Program of Higher Education (No.20134407110008), and the Science research innovation foundation of South China Normal University of China (No.2013kyjj041).

      More Information
      • Corresponding author: E-mail: lzq@semi.ac.cn; E-mail: herofate@126.com
      • Received Date: 2015-01-05
      • Accepted Date: 2015-02-05
      • Published Date: 2015-01-25

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