J. Semicond. > 2015, Volume 36 > Issue 5 > 054007
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SEMICONDUCTOR DEVICES

High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

Yongping Liao1, 2, Yu Zhang1, 2, Junliang Xing1, 2, Sihang Wei1, 2, Hongyue Hao1, 2, Guowei Wang1, 2, Yingqiang Xu1, 2 and Zhichuan Niu1, 2,

+ Author Affiliations

 Corresponding author: Zhichuan Niu, E-mail: zcniu@semi.ac.cn

DOI: 10.1088/1674-4926/36/5/054007

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Abstract: 2 μ m AlGaAsSb/InGaSb type-I quantum-well high-power laser diodes (LDs) are grown using molecular beam epitaxy. Stripe-type waveguide single LD (single emitter) and array LD (four emitters) devices without facet coatings are fabricated. For the single LDs (single emitter) device, the maximum output power under continuous wave (CW) operation is 0.5 W at 10 ℃ with a threshold current density of 150 A/cm2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.

Key words: laser diodes, arrays, emitters, quantum wells



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Fig. 1.  Layer design of the 2 $\mu $m GaSb based QWs LD.

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Fig. 2.  An SEM image of the section after ICP etching.

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Fig. 3.  The $I$-$V$-$P$ and WPE characteristics of the single emitter in the CW mode at 10 C with facets uncoated.

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Fig. 4.  The $I$-$P$ characteristics of the single emitter in the pulsed mode.

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Fig. 5.  (Color online) The emission spectrum when current changed from 0.4 to 1~A at RT.

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Fig. 6.  The $I$-$V$-$P$ characteristics of linear arrays consisting of (a) two and (b) four broad area emitters, measured in the CW mode at 10 C and RT.

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Fig. 7.  The $I$-$P$ characteristics of the four emitter linear arrays measured in the pulsed mode.

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    Received: 11 October 2014 Revised: Online: Published: 01 May 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054007
      Yongping Liao, Yu Zhang, Junliang Xing, Sihang Wei, Hongyue Hao, Guowei Wang, Yingqiang Xu, Zhichuan Niu. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. Journal of Semiconductors, 2015, 36(5): 054007. doi: 10.1088/1674-4926/36/5/054007 ****Y P Liao, Y Zhang, J L Xing, S H Wei, H Y Hao, G W Wang, Y Q Xu, Z C Niu. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. J. Semicond., 2015, 36(5): 054007. doi: 10.1088/1674-4926/36/5/054007.
      Citation:
      Yongping Liao, Yu Zhang, Junliang Xing, Sihang Wei, Hongyue Hao, Guowei Wang, Yingqiang Xu, Zhichuan Niu. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. Journal of Semiconductors, 2015, 36(5): 054007. doi: 10.1088/1674-4926/36/5/054007 ****
      Y P Liao, Y Zhang, J L Xing, S H Wei, H Y Hao, G W Wang, Y Q Xu, Z C Niu. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. J. Semicond., 2015, 36(5): 054007. doi: 10.1088/1674-4926/36/5/054007.
      shu

      High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

      DOI: 10.1088/1674-4926/36/5/054007
      • 1.

        State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

      Funds:

      Project supported by the National Basic Research Program of China (Nos.2014CB643903, 2013CB932904, 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (No.2012YQ140005), the National Natural Science Foundation of China (Nos.61274013, U1037602, 61290303), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (No.XDB01010200).

      More Information
      • Corresponding author: E-mail: zcniu@semi.ac.cn
      • Received Date: 2014-10-11
      • Accepted Date: 2014-11-24
      • Published Date: 2015-01-25

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