Citation: |
Guoping Tang, Hongfei Yao, Xiaohua Ma, Zhi Jin, Xinyu Liu. On-wafer de-embedding techniques from 0.1 to 110 GHz[J]. Journal of Semiconductors, 2015, 36(5): 054012. doi: 10.1088/1674-4926/36/5/054012
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G P Tang, H F Yao, X H Ma, Z Jin, X Y Liu. On-wafer de-embedding techniques from 0.1 to 110 GHz[J]. J. Semicond., 2015, 36(5): 054012. doi: 10.1088/1674-4926/36/5/054012.
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On-wafer de-embedding techniques from 0.1 to 110 GHz
DOI: 10.1088/1674-4926/36/5/054012
More Information
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Abstract
On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving results of thru-reflect-line (TRL) and line-reflect-match (LRM) de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1-40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.-
Keywords:
- model,
- millimeter-wave,
- de-embed,
- TRL,
- LRM
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] -
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