Fig. 1.
Zero-field conductivities plotted as a function of $T^{1/2}$ for the eight $^{70}$Ge:Ga samples. As mentioned above,we have reanalyzed experimental data obtained in Reference [21].
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M Errai, A El Kaaouachi, H El Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. Journal of Semiconductors, 2015, 36(6): 062001. doi: 10.1088/1674-4926/36/6/062001
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M Errai, A E Kaaouachi, H E Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. J. Semicond., 2015, 36(6): 062001. doi: 10.1088/1674-4926/36/6/062001.
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Electrical properties of Ge:Ga near the metal-insulator transition
DOI: 10.1088/1674-4926/36/6/062001
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Abstract
The results of the metal-insulator transition (MIT) induced by impurity concentration are presented in the case of metallic and insulating samples 70Ge:Ga p-type. The eight samples studied have Ga concentrations N ranging from 1.848 × 1017 to 1.912 × 1017cm-3. The conductivity measurements were carried out at low temperature in the range 1 to 0.019 K. We provide physical explanations to explain the behaviors of the temperature dependence of the electrical conductivity in both sides of the MIT. The data are for a 70Ge:Ga sample prepared and reported by Itoh et al. in Ref. [Itoh K M, Watanabe M, Ootuka Y, et al. J Phys Soc Jpn, 2004, 73(1): 173]. -
References
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